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Noise modeling for RF CMOS circuit simulation
Abstract
The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.
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Cited by
A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers
Liao, C.-F., & Liu, S.-I. (2007) · IEEE Journal of Solid-State Circuits · doi:10.1109/jssc.2006.889356 · Cited by 373
Power-saving design opportunities for wireless intracortical brain–computer interfaces
Even-Chen, N., Muratore, D. G., Stavisky, S. D., Hochberg, L. R., Henderson, J. M., Murmann, B., & Shenoy, K. V. (2020) · Nature Biomedical Engineering · doi:10.1038/s41551-020-0595-9 · Cited by 118
Noise, Distortion and Mismatch
(2017) · Systematic Design of Analog CMOS Circuits · doi:10.1017/9781108125840.004 · Cited by 1
Metadata
- Authors
- Scholten, A. J., Tiemeijer, L. F., van Langevelde, R., Havens, R. J., Zegers-van Duijnhoven, A. T. A., & Venezia, V. C.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2003-03
- Volume
- 50
- Issue
- 3
- Pages
- 618-632
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2129712034
- Cited by
- 382
- References
- 0
- FWCI
- 36.87
- Type
- journal article
- Language
- en
- Open access
- closed
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- Scholten, A. J., Tiemeijer, L. F., van Langevelde, R., Havens, R. J., Zegers-van Duijnhoven, A. T. A., & Venezia, V. C. (2003). Noise modeling for RF CMOS circuit simulation. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2003.810480
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