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Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
Abstract
This paper addresses the numerical modeling of reset programming in NiO-based resistive-switching memory. In our model, we simulate electrical conduction and heating in the conductive filament (CF), which controls the resistance of the low resistive (or set) state, accounting for CF thermal-activated dissolution. Employing CF electrical and thermal parameters, which were previously characterized on our NiO-based samples, our calculations are shown to match experimental reset and retention characteristics. Simulations show that reset transition is self-accelerated as a consequence of a positive feedback between the thermal dissolution of the CF and local Joule heating in the CF bottleneck, which can account for the abrupt resistance transition in experimental data. Finally, the model is used to investigate the reduction of the reset current, which is needed for device application.
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Cited by
Wong, H.-S. P., Lee, H.-Y., Yu, S., Chen, Y.-S., Wu, Y., Chen, P.-S., Lee, B., Chen, F. T., & Tsai, M.-J. (2012) · Proceedings of the IEEE · doi:10.1109/jproc.2012.2190369 · Cited by 2,757
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Kim, K. M., Jeong, D. S., & Hwang, C. S. (2011) · Nanotechnology · doi:10.1088/0957-4484/22/25/254002 · Cited by 631
Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184545 · Cited by 355
Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101117 · Cited by 348
Metadata
- Authors
- Russo, U., Ielmini, D., Cagli, C., & Lacaita, A. L.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2009-02
- Volume
- 56
- Issue
- 2
- Pages
- 193-200
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2114108612
- Cited by
- 389
- References
- 0
- FWCI
- 25.08
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Russo, U., Ielmini, D., Cagli, C., & Lacaita, A. L. (2009). Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2008.2010584
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