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Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs
Open accessAbstract
We present an atomistic 3-D simulation study of the performance of graphene-nanoribbon (GNR) Schottky-barrier field-effect transistors (SBFETs) and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance for both digital and terahertz applications. The impact of nonidealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness, and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single-vacancy defect largely affect the performance of both device types.
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Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Cited by
Wettability and Surface Free Energy of Graphene Films
Wang, S., Zhang, Y., Abidi, N., & Cabrales, L. (2009) · Langmuir · doi:10.1021/la901402f · Cited by 1,019
Graphene-Silicon Schottky Diodes
Chen, C.-C., Aykol, M., Chang, C.-C., Levi, A. F. J., & Cronin, S. B. (2011) · Nano Letters · doi:10.1021/nl104364c · Cited by 485
Metadata
- Authors
- Yoon, Y., Fiori, G., Hong, S., Iannaccone, G., & Guo, J.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2008-09
- Volume
- 55
- Issue
- 9
- Pages
- 2314-2323
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W2136361956
- Cited by
- 165
- References
- 1
- FWCI
- 5.56
- Type
- journal article
- Language
- en
- Open access
- green
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- Yoon, Y., Fiori, G., Hong, S., Iannaccone, G., & Guo, J. (2008). Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2008.928021
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