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Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Open access
Liu, Leitao, Kumar, S. Bala, Ouyang, Yijian, Guo, Jing·2011·IEEE Transactions on Electron Devices

Abstract

The performance limits of monolayer transition metal dichalcogenide ( MX2) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX2. We find the lattice structures of monolayer MX2remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX2promising 2-D materials for future nanoelectronic device applications.

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Crossref · 10.1109/ted.2011.2159221

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Metadata

Authors
Liu, L., Kumar, S. B., Ouyang, Y., & Guo, J.
Venue
IEEE Transactions on Electron Devices
Published
2011-09
Volume
58
Issue
9
Pages
3042-3047
ISSN
  • 0018-9383 (ISSN-L)
  • 1557-9646
OpenAlex
W2112787360
Cited by
502
References
7
FWCI
17.04
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors. https://app.cochat.ai/papers/10.1109/ted.2011.2159221
The paper
Liu, L., Kumar, S. B., Ouyang, Y., & Guo, J. (2011). Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2011.2159221

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.