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Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
Open accessAbstract
The performance limits of monolayer transition metal dichalcogenide ( MX2) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX2. We find the lattice structures of monolayer MX2remain the same as the bulk MX2. Within the ballistic regime, the performances of monolayer MX2transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX2promising 2-D materials for future nanoelectronic device applications.
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Cites
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Cited by
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J., & Hersam, M. C. (2014) · ACS Nano · doi:10.1021/nn500064s · Cited by 2,753
(2012) · doi:10.1103/physrevb.85.033305 · Cited by 1,307
Second harmonic microscopy of monolayer MoS2
Kumar, N., Najmaei, S., Cui, Q., Ceballos, F., Ajayan, P. M., Lou, J., & Zhao, H. (2013) · Physical Review B · doi:10.1103/physrevb.87.161403 · Cited by 699
Metadata
- Authors
- Liu, L., Kumar, S. B., Ouyang, Y., & Guo, J.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2011-09
- Volume
- 58
- Issue
- 9
- Pages
- 3042-3047
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2112787360
- Cited by
- 502
- References
- 7
- FWCI
- 17.04
- Type
- journal article
- Language
- en
- Open access
- green
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- Liu, L., Kumar, S. B., Ouyang, Y., & Guo, J. (2011). Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2011.2159221
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