On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

Cited by (355)

Items 201–300 of 355

1. Understanding the Formation of Conducting Filaments in RRAM Through the Design of Experiments
   Panagiotis Bousoulas, D. Tsoukalas · 2016 · International Journal of High Speed Electronics and Systems
2. Electroforming-free TaOx memristors using focused ion beam irradiations
   Jose L Pacheco, Daniel L. Perry, David Russell Hughart, Matthew J. Marinella, Edward S. Bielejec · 2018 · Applied Physics A
3. Modeling the VCM‐ and ECM‐Type Switching Kinetics
   Stephan Menzel, Ji‐Hyun Hur · 2016
4. Simulation of Resistive Switching in Memristor Structures Based on Transition Metal Oxides
   O. O. Permyakova, Alexander E. Rogozhin · 2020 · Russian Microelectronics
5. Quantitative method for estimating characteristics of conductive filament in ReRAM
   Zhiqiang Wei, Ryutaro Yasuhara, Koji Katayama, Takumi Mikawa, Takeki Ninomiya, S. Muraoka · 2014 · IEEE International Symposium on Circuits and Systems proceedings
6. Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach
   Samuel Aldana, P. García‐Fernández, Rocío Romero‐Zaliz, F. Jiménez-Molinos, Francisco M. Gómez‐Campos, J.B. Roldán · 2018 · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
7. Reduced HfO₂ Resistive Memory Variability by Inserting a Thin SnO₂ as Oxygen Stopping Layer
   Wei-Chen Chen, Shengjun Qin, Zhouchangwan Yu, H.‐S. Philip Wong · 2021 · IEEE Electron Device Letters
8. Hierarchical Chunking of Sequential Memory on Neuromorphic Architecture with Reduced Synaptic Plasticity
   Guoqi Li, Lei Deng, Dong Wang, Wei Wang, Fei Zeng, Ziyang Zhang, Huanglong Li, Sen Song, Jing Pei, Luping Shi · 2016 · Frontiers in Computational Neuroscience
9. On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling
   Ximeng Guan, Shimeng Yu, H.‐S. Philip Wong · 2012
10. Newly developed process integration technologies for highly reliable 40 nm ReRAM
    Shinichi Yoneda, Satoru Ito, Yukio Hayakawa, Zhiqiang Wei, S. Muraoka, Ryutaro Yasuhara, Koichi Kawashima, 敦史 姫野, Takumi Mikawa · 2019 · Japanese Journal of Applied Physics
11. Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks
    Zizhen Jiang, Ziwen Wang, Xin Zheng, Scott W. Fong, Shengjun Qin, Hong-Yu Chen, Chiyui Ahn, Ji Cao, Yoshio Nishi, S.S. Wong et al. · 2020 · IEEE Transactions on Electron Devices
12. Physics-Based Stochastic Three-Dimensional Modeling for Metal–Oxide Resistive Random Access Memory
    Siyuan Chen · 2021 · IEEE Transactions on Electron Devices
13. Modeling and characterization of stochastic resistive switching in single Ag2S nanowires
    Nikolay Frick, Mahshid Hosseini, Damien Guilbaud, Ming Gao, Thomas H. LaBean · 2022 · Scientific Reports
14. Stochastic Modeling of FinFET Degradation Based on a Resistor Network Embedded Metropolis Monte Carlo Method
    S. Mei, Nagarajan Raghavan, Michel Bosman, K. L. Pey · 2018 · IEEE Transactions on Electron Devices
15. Modeling and design of a Mott selector for a ReRAM-based non-volatile memory cell in a crossbar architecture
    Mohammadreza Farjadian, Majid Shalchian · 2022 · Journal of Computational Electronics
16. Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide
    Takahiro Moriyama, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, Kentaro Kinoshita · 2016 · Journal of Applied Physics
17. Comprehensive Investigation of Multitraps-Induced Degradation in HfO2-Based nmosfets With Interfacial Layer by Three-Dimensional KMC Method
    Yun Li, Peng Cheng Huang, Shaoyan Di, Xing Zhang, Gang Du, Xiaoyan Liu · 2017 · IEEE Transactions on Nanotechnology
18. Optimization of the position of TaOx:N-based barrier layer in TaOx RRAM devices
    Pramod Ravindra, Maximilian Liehr, Rajas Mathkari, Karsten Beckmann, Natalya A. Tokranova, Nathaniel C. Cady · 2024 · Frontiers in Materials
19. Microscopic model for the kinetics of the reset process in HfO2 RRAM
    Asadollah Kalantarian, Gennadi I. Bersuker, B. Butcher, David C. Gilmer, S. Privitera, Salvatore Antonino Lombardo, Robert E. Geer, Yoshio Nishi, P. D. Kirsch, R. Jammy · 2013 · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
20. Physical modeling of voltage-driven resistive switching in oxide RRAM
    Daniele Ielmini, Stefano Larentis, Simone Balatti · 2012 · IEEE International Integrated Reliability Workshop final report
21. Coding Assisted Adaptive Thresholding for Sneak-Path Mitigation in Resistive Memories
    Zehui Chen, Clayton Schoeny, Lara Dolecek · 2018 · IEEE Information Theory Workshop (ITW)
22. A Physics-Based Analytic Model of Analog Switching Resistive Random Access Memory
    L. Cai, Wang-Yong Chen, Yudi Zhao, Xiao-Yan Liu, Jin-Feng Kang, Xing Zhang, Peng Huang · 2020 · IEEE Electron Device Letters
23. Entropy source characterization in HfO2 RRAM for TRNG applications
    Florian Pebay-Peyroula, Thomas Dalgaty, Elisa Vianello · 2020 · International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)
24. KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices
    Elhameh Abbaspour, Stephan Menzel, Christoph Jungemann · 2016 · International Conference on Simulation of Semiconductor Processes and Devices
25. Modeling the conduction mechanisms of intrinsic multi-level states in HfOx-based resistive random access memory
    Shenghua Cheng, Xiaohu Wang, Hao Zhang, Yongbo Liu, Tingying Shen, Xinyi Li, Bin Gao, He Qian · 2023 · Applied Physics Letters
26. Manganite memristive devices: recent progress and emerging opportunities
    Alejandro Schulman, H. Huhtinen, P. Paturi · 2024 · Journal of Physics D Applied Physics
27. An RRAM-based MLC design approach
    A.A. Bagheri-Soulla, M. B. Ghaznavi‐Ghoushchi · 2017 · Microelectronics Journal
28. Complementary resistive switching characteristics of solid electrolyte chalcogenide AgxTe nanoparticles for high-density crossbar random access memory
    Won‐Yong Lee, Yoonjin Cho, Sang‐Woo Lee, Kwangeun Kim, Jin‐Hyuk Bae, In Man Kang, Jaewon Jang · 2024 · Materials Today Nano
29. Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic Characteristics
    Gyeongpyo Kim, Seoyoung Park, Minsuk Koo, Sungjun Kim · 2024 · Biomimetics
30. Aging Aware Retraining for Memristor-based Neuromorphic Computing
    Wenwen Ye, Grace Li Zhang, Bing Li, Ulf Schlichtmann, Cheng Zhuo, Xunzhao Yin · 2022 · IEEE International Symposium on Circuits and Systems proceedings
31. Sol–Gel-Processed Y2O3–Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices
    Hae-In Kim, Taehun Lee, Yoonjin Cho, Sang‐Woo Lee, Won‐Yong Lee, Kwangeun Kim, Jaewon Jang · 2023 · Nanomaterials
32. Physical model for electroforming process in valence change resistive random access memory
    Pengxiao Sun, Ling Li, Nianduan Lu, Hangbing Lv, Ming Liu, Su Liu · 2014 · Journal of Computational Electronics
33. Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation
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34. Modeling-Based Design of Memristive Devices for Brain-Inspired Computing
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35. Overview of Current Compliance Effect on Reliability of Nano Scaled Metal Oxide Resistive Random Access Memory Device
    A. Napolean, N. M. Sivamangai, Joel Samuel, Vimukth John · 2018 · International Conference on Devices, Circuits and Systems (ICDCS)
36. Reducing Hibernation Energy and Degradation in Bipolar ReRAM-Based Non-Volatile Processors
    Mehrdad Biglari, Tobias Lieske, Dietmar Fey · 2019 · IEEE Transactions on Nanotechnology
37. A Monte Carlo analysis of a write method used in passive nanoelectronic crossbars
    Arne Heittmann, Tobias G. Noll · 2012 · IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)
38. 3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling
    Yun Li, Zhiyuan Lun, Peng Cheng Huang, Yijiao Wang, Hai Jiang, Gang Du, Xiaoyan Liu · 2015 · International Conference on Simulation of Semiconductor Processes and Devices
39. Review of physics-based compact models for emerging nonvolatile memories
    Nuo Xu, Pai-Yu Chen, Jing Wang, Woosung Choi, Keun-Ho Lee, Eun Seung Jung, Shimeng Yu · 2017 · Journal of Computational Electronics
40. Random telegraph noise analysis in redox-based resistive switching devices using KMC simulations
    Elhameh Abbaspour, Stephan Menzel, Christoph Jungemann · 2017 · International Conference on Simulation of Semiconductor Processes and Devices
41. Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory
    Po-Cheng Su, Cheng-Min Jiang, Chih‐Wei Wang, Tahui Wang · 2018 · IEEE Electron Device Letters
42. Compact Modeling of Resistive Switching Memory (RRAM) With Voltage and Temperature Dependences
    Artem Glukhov, Davide Bridarolli, S. Ricci, Ren Li, Sonal Shreya, Hooman Farkhani, Farshad Moradi, Daniele Ielmini · 2023 · IEEE Nanotechnology Materials and Devices Conference (NMDC)
43. Ferroelectric FET-Based Bayesian Inference Engine for Disease Diagnosis
    Arka Chakraborty, Musaib Rafiq, Yawar Hayat Zarkob, Yogesh Singh Chauhan, Shubham Sahay · 2025 · IEEE Transactions on Circuits and Systems I Regular Papers
44. Reliable Multistate RRAM Devices for Reconfigurable CAM and IMC Applications
    Shengpeng Xing, Zijian Wang, Zhen Wang, Pengtao Li, Xuemeng Fan, Ziyang Zhang, Guobin Zhang, Jiajun Kan, Qi Luo, Shuai Zhong et al. · 2025 · IEEE Journal of the Electron Devices Society
45. A compact SPICE model for bipolar resistive switching memory
    Kai-Hsiang Hsu, Wei-Wen Ding, Meng‐Hsueh Chiang · 2013 · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
46. Experimental and Theoretical Study of Intrinsic Variability in Hafnium Oxide Based RRAM
    Mikhail I. Fedotov, Victor I. Korotitsky, S. Koveshnikov · 2021 · International Siberian workshops and tutorials on electron devices and materials
47. A Physical Description of the Variability in Single‐ReRAM Devices and Hardware‐Based Neuronal Networks
    Carsten Funck, Stefan Wiefels, Christopher Bengel, Kristoffer Schnieders, Susanne Hoffmann‐Eifert, Regina Dittmann, Stephan Menzel · 2023 · Advanced Intelligent Systems
48. Investigation of power dissipation for ReRAM in crossbar array architecture
    Wookyung Sun, Hyein Lim, Hyungsoon Shin, Wootae Lee · 2014 · Non-Volatile Memory Technology Symposium
49. Synaptic devices based on HfO2 memristors
    Mireia Bargalló González, Marcos Maestro-Izquierdo, Samuel Poblador, M. Zabala, F. Campabadal, Gerardo González-Cordero, Samuel Aldana, David Maldonado, F. Jiménez-Molinos, J.B. Roldán · 2021 · Elsevier eBooks
50. Statistical modeling of program and read variability in resistive switching devices
    Stefano Ambrogio, Simone Balatti, Antonio Cubeta, Daniele Ielmini · 2014 · IEEE International Symposium on Circuits and Systems proceedings
51. Scaling of oxide-based resistive switching devices
    Daniele Ielmini, Stefano Ambrogio, Simone Balatti · 2014 · Non-Volatile Memory Technology Symposium
52. Reliability investigation of high- k /metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions
    Yun Li, Hai Jiang, Zhiyuan Lun, Yijiao Wang, Peng Cheng Huang, Hao Hao, Gang Du, Xing Zhang, Xiaoyan Liu · 2016 · Japanese Journal of Applied Physics
53. Tracking oxygen vacancy migration in memristor devices using operando hard X-ray photoelectron spectroscopy
    F. Capocasa, Abdul K. Rumaiz, Conan R. Weiland, Ryan W. Goul, A. Marshall, I. Harding, Arif Ozbay, Anthony J. Kuczewski, S. Karmakar, Mohamed Boukhicha et al. · 2025 · Scientific Reports
54. Bipolar resistive switching memory with bismuth sulfide quantum dots
    Ritu Rohilla, Lalita Goswami, Arti Bisht, V. K. Maurya, Ritu Srivastava, Ajeet Kumar · 2025 · Journal of Applied Physics
55. Variability and failure of set process in HfO2 RRAM
    Simone Balatti, Stefano Ambrogio, Daniele Ielmini, David C. Gilmer · 2013 · IEEE International Memory Workshop (IMW)
56. AC stress and electronic effects on SET switching of HfO2 RRAM
    Jen‐Chieh Liu, Blanka Magyari‐Köpe, Shengjun Qin, Xin Zheng, H.‐S. Philip Wong, Tuo‐Hung Hou · 2017 · Applied Physics Letters
57. An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory
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58. Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO2 Multilayers
    Juan Ramirez-Rios, Karla Esther González-Flores, José Juan Avilés Bravo, Sergio Alfonso Pérez‐García, Javier Flores Méndez, Mario Moreno, Alfredo Morales-Sánchez · 2023 · Nanomaterials
59. Multi-level memristive voltage divider
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60. Influence of specific forming algorithms on the device-to-device variability of memristive Al-doped HfO2 arrays
    Mamathamba Kalishettyhalli Mahadevaiah, Eduardo Pérez, Christian Wenger · 2019 · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
61. Computational Investigation of Nanoscale Memristor Devices for Neuromorphic Computing
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62. Resistive‐Switching Memory
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63. Nano-Intrinsic True Random Number Generation
    Jeeson Kim, Taimur Ahmed, Hussein Nili, Nhan Duy Truong, Jiawei Yang, Doo Seok Jeong, Sharath Sriram, Damith Chinthana Ranasinghe, Omid Kavehei · 2017 · arXiv (Cornell University)
64. A comprehensive study on resistive random access memory based true random number generators
    Furqan Zahoor · 2025 · Computers & Electrical Engineering
65. MoF-LoRA: Mixture of Low-Rank Fault-Tolerant Experts for RRAM-Based In-Memory Computing
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66. Optimization of uniformity in resistive switching memory by reducing thermal effect
    Zhe Chen, Peng Cheng Huang, Haitong Li, Bing Chen, Yi Hou, Feifei Zhang, Bin Gao, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang · 2014 · IEEE International Conference on Solid-State and Integrated Circuit Technology
67. Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides
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68. Modeling variability and irreproducibility of nanoelectronic resistive switches for circuit simulation
    Arne Heittmann, T. G. Noll · 2013 · Asia and South Pacific Design Automation Conference (ASP-DAC)
69. Comparison of electric field dependent activation energy for electroformation in TaOx and TiOx based RRAMs
    Abhishek A. Sharma, Mohammad Noman, Marek Skowroński, James A. Bain · 2013 · IEEE International Integrated Reliability Workshop final report
70. Investigation of PBTI Degradation in Nanosheet nFETs With HfO2 Gate Dielectric by 3D-KMC Method
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71. Spatiotemporal dynamics of voltage-induced resistance transition in the double-exchange model
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72. Self-Terminating Write of Multi-Level Cell ReRAM for Efficient Neuromorphic Computing
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73. Investigation of the Large Variability of HfO2‐Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model
    Ching-Jung Chen, Konstantin Z. Rushchanskii, Christoph Jungemann · 2023 · physica status solidi (a)
74. A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode
    Xingyu Zhai, Yun Li, Wen-Yan Yin, Shuo Zhang, Wenxuan Zang, Yanbin Yang, Hao Xie, Wenchao Chen · 2024 · IEEE Transactions on Nanotechnology
75. TCAD Simulation of Resistive Switching Devices: Impact of ReRAM Configuration on Neuromorphic Computing
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76. Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes
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77. Electrical properties of two-dimensional TiS2/V2O5 memristor with high thermal stability
    Lijun He, Mi Yu, Yuhang Qin, Liyan Wang, Cheng Mi, Peixuan Yang, Qijun Huang, Liang She, Kang Ma · 2025 · Physics Letters A
78. Resistive switching in TiN/Hf x Al1 − x O y /HfO2/TiN and TiN/HfO2/Ti/TiN structures
    Oleg M. Orlov, Evgeniy Sergeevich Gornev, A. V. Shadrin, С. А. Зайцев, S. A. Morozov, A. V. Zablotskii · 2014 · Russian Microelectronics
79. Stable resistive switching characteristics of Ce:HfOx film induced by annealing process
    Tingting Guo, Tingting Tan, Zheng‐Tang Liu · 2016 · Materials Science in Semiconductor Processing
80. A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs
    Samuel Aldana, P. García‐Fernández, Rocío Romero‐Zaliz, Mireia Bargalló González, F. Jiménez-Molinos, F. Campabadal, Francisco M. Gómez‐Campos, J.B. Roldán · 2018 · Spanish Conference on Electron Devices
81. Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read
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82. Investigation of Factors Affecting SET-Disturb Failure Time in a Resistive Switching Memory
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83. Resistive switching random access memory — Materials, device, interconnects, and scaling considerations
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84. Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results
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85. Electric Crosstalk Effect in Valence Change Resistive Random Access Memory
    Jing Wei Sun, Hong Wang, Shiwei Wu, Fang Song, Zhan Wang, Haixia Gao, Xiaohua Ma · 2017 · Journal of Electronic Materials
86. Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anode
    Wilhelm Stehling, Elhameh Abbaspour, Christoph Jungemann, Stephan Menzel · 2017 · Non-Volatile Memory Technology Symposium
87. Relative Efficiency of Memristive and Digital Neuromorphic Crossbars
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88. Verilog-A SPICE Model of PECVD SiO2 OTP Memory Device
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89. Semi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
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90. 2D simulation of the resistive state in bipolar resistive switching memories based on oxygen vacancies
    J. Federico Ramirez Rios, S. A. Perez Garcia, Mario Moreno, Alfredo Morales-Sánchez · 2022 · IEEE Latin American Electron Devices Conference (LAEDC)
91. A first-principle analysis of resistive switching enhancement of HfO2 thin film induced by zinc doping method
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92. Modeling of Gate Tunable Synaptic Device for Neuromorphic Applications
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93. MemriSim: A theoretical framework for simulating electron transport in oxide memristors
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94. Three-Dimensional Simulation of Bipolar Resistive Switching Memory with Embedded Conductive Nanocrystals in an Oxide Matrix
    Juan Ramirez-Rios, José Juan Avilés Bravo, Mario Moreno, Luis Hernández-Martínez, Alfredo Morales-Sánchez · 2025 · Chips
95. Programming optimization for alleviating relaxation effect in RRAM high-resistance state
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96. A CMOS‐Compatible Protonic Memristor Made from H‐Graphene/ZrO2/HxWO3 Stacks with Asymmetrical Proton Concentration
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97. Design and analysis of multi-layer ZrO2-based resistive random access memory (RRAM) for next-generation non-volatile memory
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98. Investigation and Application of Two-Level Random Telegraph Noise in Ti/HfO x /TiN RRAM Using 3-D Multiphysics Modeling
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99. Resistive Random Access Memory (RRAM) 1960–2025: Review
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100. Simulation of Positive Bias Temperature Instability (PBTI) in high-k FinFET by KMC method
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