The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
Abstract
Resistive-switching memory (RRAM) based on transition metal oxides is a potential candidate for replacing Flash and dynamic random access memory in future generation nodes. Although very promising from the standpoints of scalability and technology, RRAM still has severe drawbacks in terms of understanding and modeling of the resistive-switching mechanism. This paper addresses the modeling of resistive switching in bipolar metal-oxide RRAMs. Reset and set processes are described in terms of voltage-driven ion migration within a conductive filament generated by electroforming. Ion migration is modeled by drift–diffusion equations with Arrhenius-activated diffusivity and mobility. The local temperature and field are derived from the self-consistent solution of carrier and heat conduction equations in a 3-D axis-symmetric geometry. The model accounts for set–reset characteristics, correctly describing the abrupt set and gradual reset transitions and allowing scaling projections for metal-oxide RRAM.
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Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
Menzel, S., Waters, M., Marchewka, A., Böttger, U., Dittmann, R., & Waser, R. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201101117 · Cited by 348
Cited by
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“Pulse accumulation in nanoscale elements has been demonstrated in RRAM devices, where repeated pulses cause incremental reset transitions because of the gradual increase of the depleted gap disconnecting the conductive path 66 .”
BackgroundSelf-citationKim, S., Du, C., Sheridan, P., Ma, W., Choi, S., & Lu, W. D. (2015) · Nano Letters · doi:10.1021/acs.nanolett.5b00697 · Cited by 603
Understanding memristive switching via in situ characterization and device modeling
Sun, W., Gao, B., Chi, M., Xia, Q., Yang, J. J., Qian, H., & Wu, H. (2019) · Nature Communications · doi:10.1038/s41467-019-11411-6 · Cited by 482
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Starschich, S., Menzel, S., & Böttger, U. (2016) · Applied Physics Letters · doi:10.1063/1.4940370 · Cited by 308
Ambrogio, S., Balatti, S., Milo, V., Carboni, R., Wang, Z.-Q., Calderoni, A., Ramaswamy, N., & Ielmini, D. (2016) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2016.2526647 · Cited by 256
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Metadata
- Authors
- Larentis, S., Nardi, F., Balatti, S., Gilmer, D. C., & Ielmini, D.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2012-09
- Volume
- 59
- Issue
- 9
- Pages
- 2468-2475
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2051133151
- Cited by
- 495
- References
- 5
- FWCI
- 22.59
- Type
- journal article
- Language
- en
- Open access
- closed
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