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Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
Abstract
By tuning the SET/RESET pulse amplitude conditions, the pulse endurance of our 40-nm HfO2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure behaviors after 106cycles. For unbalanced SET/RESET pulse amplitude conditions, both low-resistance state (LRS) and high-resistance state (HRS) failures may occur, while varying the pulsewidths influences the LRS/HRS window and the stability of the LRS/HRS states. The failure of the HRS or LRS state during cycling is ascribed to the depletion or excess of oxygen vacancies at the switching interface. Through a dc SET/RESET recovery operation, LRS/HRS states can be recovered after failure, indicating that the distribution of oxygen vacancies can be restored. By optimally balancing the SET/RESET pulse conditions, more than 1010pulse endurance cycles is achieved.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Cited by
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Chen, Y. Y., Goux, L., Clima, S., Govoreanu, B., Degraeve, R., Kar, G. S., Fantini, A., Groeseneken, G., Wouters, D. J., & Jurczak, M. (2013) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2013.2241064 · Cited by 271
Self-citation(2014) · doi:10.1109/vlsit.2014.6894403 · Cited by 37
Metadata
- Authors
- Chen, Y. Y., Govoreanu, B., Goux, L., Degraeve, R., Fantini, A., Kar, G. S., Wouters, D. J., Groeseneken, G., Kittl, J. A., Jurczak, M., & Altimime, L.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2012-12
- Volume
- 59
- Issue
- 12
- Pages
- 3243-3249
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2137862082
- Cited by
- 189
- References
- 2
- FWCI
- 8.75
- Type
- journal article
- Language
- en
- Open access
- closed
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- Chen, Y. Y., Govoreanu, B., Goux, L., Degraeve, R., Fantini, A., Kar, G. S., Wouters, D. J., Groeseneken, G., Kittl, J. A., Jurczak, M., & Altimime, L. (2012). Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2012.2218607
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