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Cited by 141Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices2D Materials and Applications

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Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs

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Sajjad, Redwan N., Chern, Winston, Hoyt, Judy L., Antoniadis, Dimitri A.·2016·IEEE Transactions on Electron Devices
DOI 10.1109/ted.2016.2603468
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Abstract

We provide a detailed study of the oxide- semiconductor interface trap assisted tunneling (TAT) mechanism in tunnel FETs to show how it contributes a major leakage current path before the band-to-band tunneling (BTBT) is initiated. With a modified Shockley-Read-Hall formalism, we show that at room temperature, the phonon assisted TAT current always dominates and obscures the steep turn ON of the BTBT current for common densities of traps. Our results are applicable to top gate, double gate, and gate-all-around structures, where the traps are positioned between the source-channel tunneling regions. Since the TAT has strong dependence on electric field, any effort to increase the BTBT current by enhancing local electric field also increases the leakage current. Unless the BTBT current can be increased separately, calculations show that the trap density Dit has to be decreased by 40-100 times compared with the state of the art in order for the steep turn ON (for III-V materials) to be clearly observable at room temperature. We find that the combination of the intrinsic sharpness of the band edges (Urbach tail) and the surface trap density determines the subthreshold swing.

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Metadata

Authors
Sajjad, R. N., Chern, W., Hoyt, J. L., & Antoniadis, D. A.
Affiliations
Massachusetts Institute of Technology (US)
ORCID
Venue
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2016-11
Volume
63
Issue
11
Pages
4380-4387
ISSN
  • 0018-9383 (ISSN-L)
  • 1557-9646
DOI
10.1109/ted.2016.2603468
OpenAlex
W2304495689
Cited by
141
References
0
Citations by year
2026: 15 · 2025: 16 · 2024: 16 · 2023: 11 · 2022: 10 · 2021: 14 · 2020: 24 · 2019: 12 · 2018: 13 · 2017: 9 · 2016: 1
FWCI
4.84
Type
journal article
Language
en
Open access
Licence
Locations
  • IEEE Transactions on Electron Devices (publishedVersion)
  • arXiv (Cornell University) (submittedVersion)
  • arXiv (Cornell University)
Funders
  • National Science Foundation through the Center for Energy Efficient Electronics Science Center (0939514)
  • NCN-NEEDS Program through the Semiconductor Research Corporation (1227020-EEC)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
  • Physical Sciences › Materials Science › Materials Chemistry › 2D Materials and Applications
Keywords
trap-assisted tunneling, tunnel field-effect transistor, subthreshold swing, band-to-band tunneling, Shockley-Read-Hall recombination, phonon-assisted tunneling, leakage current, Urbach tail, surface trap density, gate-all-around transistors, double-gate transistors, III-V materials

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