The DOI matches its Crossref record; 15 of the 15 references it cites were found in a registry or an index.
Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition
Abstract
The short-circuit ruggedness and failure mechanism of a commercial silicon carbide (SiC) MOSFET with embedded Schottky barrier diode (SBD-MOS) are evaluated and revealed in this article. Compared with a conventional planar-type SiC MOSFET (C-MOS), a distinctive difference in failure phenomenon is observed for SBD-MOS under short-circuit condition. When the short-circuit withstanding time ($\textit{t}_{\text{sc}}$) of SBD-MOS exceeds 3.5$\mu $s at 600-V bus voltage, the device fails to shut down, even though the gate is turned off. After a brief decrease, the short-circuit current rises again and continues for a period of time, eventually leading to the destructive failure. In contrast, C-MOS does not observe a similar event and$\textit{t}_{\text{sc}}$reaches to 6.5$\mu $s. The finite-element simulation and physical analysis reveal that short-circuit stress cause a severe leakage current within the embedded SBD, thereby preventing the interruption of short-circuit current. Unfortunately, the power dissipation caused by SBD leakage current provides a positive feedback with temperature, and thus, temperature continuously increases toward a higher value, eventually leading to the destructive failure of devices.
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Extended defects such as micropipes, basal plane dislocations, and stacking faults increase leakage current and reduce breakdown voltage in SiC.
“Extended defects such as micropipes, basal plane dislocations (BPDs), and stacking faults increase leakage current and reduce breakdown voltage [60-62], while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [60]
Citations
Cites
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Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
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Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode
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Understanding and reduction of degradation phenomena in SiC power devices
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Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS
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High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier
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Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs
Deng, X., Li, X., Li, X., Zhu, H., Xu, X., Wen, Y., Sun, Y., Chen, W., Li, Z., & Zhang, B. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3047896 · Cited by 65
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Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-kV SiC JBS-Integrated MOSFETs
Zhang, Y., Yang, X., Chen, H., Li, K., Zhong, W., Luo, M., Luo, J., Zhang, B., & Bai, S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.3017337 · Cited by 19
Self-citationKono, H., Asaba, S., Ohashi, T., et al. (2021) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.23919/ispsd50666.2021.9452314 · Cited by 17
Clamping Capability of Parasitic p-n Diode in SBD-Embedded SiC MOSFETs
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A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs
Kim, D., deBoer, S., Jang, S. Y., et al. (2022) · doi:10.1109/wipda56483.2022.9955302 · Cited by 4
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“Extended defects such as micropipes, basal plane dislocations (BPDs), and stacking faults increase leakage current and reduce breakdown voltage [60–62], while deep-level point defects (such as the Z1/2 and EH6/7 centers) act as carrier recombination centers that shorten carrier lifetime [2].”
Metadata
- Authors
- Li, X., Deng, X., Liao, Z., Li, X., Jia, R., & Zhang, B.
- Affiliations
- University of Electronic Science and Technology of China (CN)
- Xidian University (CN)
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2025-03
- Volume
- 72
- Issue
- 3
- Pages
- 1259-1263
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W4406208670
- Cited by
- 11
- References
- 15
- Citations by year
- 2026: 9 · 2025: 2
- FWCI
- 2.47
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Electron Devices (publishedVersion)
- Funders
- National Natural Science Foundation of China (62334004, 62274025)
- Natural Science Foundation of Jiangsu Province (BK20232027)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Radiation Effects in Electronics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- SiC MOSFET, short-circuit ruggedness, short-circuit current, leakage current, temperature rise, positive feedback, power dissipation, 1200 V power devices
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