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Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters
Abstract
Medium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the active front end converter for solid-state transformers (SSTs). The transformerless intelligent power substation (TIPS) is one such application for these devices. TIPS is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid. It is an all SiC device-based multistage SST. This paper focuses on the advantages, design considerations, and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference. The efficiency of the TIPS topology is also calculated using the experimentally measured loss data of the devices and the high-frequency transformer. Experimental results captured on a developed prototype of TIPS along with its measured efficiency are also given.
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Film capacitors have much larger size and are among the physically largest components.
“Film capacitors can be used, but they have much larger size and are among the physically largest components [13].”
From 7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection (2022) · cites this paper as [13]
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References 33 · Cited by 371
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Metadata
- Authors
- Madhusoodhanan, S., Tripathi, A., Patel, D., Mainali, K., Kadavelugu, A., Hazra, S., Bhattacharya, S., & Hatua, K.
- Affiliations
- North Carolina State University (US)
- Indian Institute of Technology Madras (IN)
- ORCID
- Venue
- IEEE Transactions on Industry Applications
- Published
- 2015-07
- Volume
- 51
- Issue
- 4
- Pages
- 3343-3360
- ISSN
- 0093-9994 (ISSN-L)
- 1939-9367
- OpenAlex
- W2099524704
- Cited by
- 371
- References
- 33
- Citations by year
- 2026: 15 · 2025: 17 · 2024: 29 · 2023: 34 · 2022: 41 · 2021: 46 · 2020: 51 · 2019: 45 · 2018: 31 · 2017: 22 · 2016: 30 · 2015: 10
- FWCI
- 14.92
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Industry Applications (publishedVersion)
- Funders
- U.S. Government through the DOE ARPA-E program (DE-AR0000110)
- NSF (EEC-0812121)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Keywords
- solid-state transformer, SiC IGBT, SiC MOSFET, multilevel converters, converter efficiency
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