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Cited by 276

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition

De Arco, L.G., Yi Zhang, Kumar, A., Chongwu Zhou·2009·IEEE Transactions on Nanotechnology

Abstract

The advance of graphene-based nanoelectronics has been hampered due to the difficulty in producing single- or few-layer graphene over large areas. We report a simple, scalable, and cost-efficient method to prepare graphene using methane-based CVD on nickel films deposited over complete$\hbox{Si/SiO}_{2}$wafers. By using highly diluted methane, single- and few-layer graphene were obtained, as confirmed by micro-Raman spectroscopy. In addition, a transfer technique has been applied to transfer the graphene film to target substrates via nickel etching. FETs based on the graphene films transferred to$\hbox{Si/SiO}_{2}$substrates revealed a weak p-type gate dependence, while transferring of the graphene films to glass substrate allowed its characterization as transparent conductive films, exhibiting transmittance of 80% in the visible wavelength range.

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Metadata

Authors
De Arco, L. G., Zhang, Y., Kumar, A., & Zhou, C.
Venue
IEEE Transactions on Nanotechnology
Published
2009-03
Volume
8
Issue
2
Pages
135-138
ISSN
  • 1536-125X (ISSN-L)
  • 1941-0085
OpenAlex
W2106466443
Cited by
276
References
1
FWCI
12.60
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition. https://app.cochat.ai/papers/10.1109/tnano.2009.2013620
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De Arco, L. G., Zhang, Y., Kumar, A., & Zhou, C. (2009). Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition. IEEE Transactions on Nanotechnology. https://doi.org/10.1109/tnano.2009.2013620

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