The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Basic mechanisms and modeling of single-event upset in digital microelectronics
Abstract
Physical mechanisms responsible for nondestructive single-event effects in digital microelectronics are reviewed, concentrating on silicon MOS devices and integrated circuits. A brief historical overview of single-event effects in space and terrestrial systems is given, and upset mechanisms in dynamic random access memories, static random access memories, and combinational logic are detailed. Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer simulations. The impact of technology trends on single-event susceptibility and future areas of concern are explored.
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Cites
Berger, R. W., Bayles, D., Brown, R., Doyle, S., Kazemzadeh, A., Knowles, K., Moser, D., Rodgers, J., Saari, B., Stanley, D., et al. (2002) · 2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542) · doi:10.1109/aero.2001.931184 · Cited by 30
Cited by
Radiation-induced soft errors in advanced semiconductor technologies
Baumann, R. C. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.853449 · Cited by 1,549
Soft Errors in Advanced Computer Systems
Baumann, R. (2005) · IEEE Design and Test of Computers · doi:10.1109/mdt.2005.69 · Cited by 831
Metadata
- Authors
- Dodd, P. E., & Massengill, L. W.
- Venue
- IEEE Transactions on Nuclear Science
- Published
- 2003-06
- Volume
- 50
- Issue
- 3
- Pages
- 583-602
- ISSN
- 0018-9499 (ISSN-L)
- 1558-1578
- OpenAlex
- W2141068710
- Cited by
- 1,169
- References
- 1
- FWCI
- 24.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- Dodd, P. E., & Massengill, L. W. (2003). Basic mechanisms and modeling of single-event upset in digital microelectronics. IEEE Transactions on Nuclear Science. https://doi.org/10.1109/tns.2003.813129
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