The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
The Current Sharing Optimization of Paralleled IGBTs in a Power Module Tile Using a PSpice Frequency Dependent Impedance Model
Abstract
A full circuit model of an insulated gate bipolar transistor (IGBT) power module tile is obtained using electro-magnetic analysis. A skin depth analysis on the copper and bonding wire interconnects shows that the commonly used low frequency RLC models are not adequate for power modules and reveals the necessity for a frequency dependent impedance. A method is adapted for the design of an f-dependent module tile design circuit for the first time. It is found that the importance of skin depth becomes vital especially for lower voltage ratings and faster edge rate devices as the Fourier transform becomes shifted towards higher frequencies. Analysis of the current sharing capability of the IGBTs as a function of the tile layout showed that an asymmetrical tile yields a faster response from the nearer IGBTs during inductive turn-off and an unbalanced sharing of the reverse recovery current during turn-on. A symmetric tile layout is developed. It is found that the faster current fall-time during turn-off is compensated by higher current tail oscillations thereby bringing no major improvement to the turn-off energy. During turn-on however, the reverse recovery and IGBT turn-on energy dissipation are equally distributed between the IGBTs. Simulating device imbalances also shows that threshold voltage variations have a significant effect on the current and energy sharing at turn-on whereas injection efficiency imbalances have a large influence on turn-off characteristics. The effect of device imbalances is found to decrease for a highly symmetric tile design. It is also shown that equally higher IGBT temperatures tend to improve current sharing so that IGBT module design emphasis should be placed rather on minimizing any differences in the IGBT junction temperatures. The model developed allows PSpice simulation of characteristics previously obtained only through measurements. The impact of the layout design on issues such as cross-talk, mutual inductance and ground bounce may be quickly and accurately assessed for an optimal current sharing capability.
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Citations
Cites
A simple power diode model with forward and reverse recovery
Ma, C., & Lauritzen, P. O. (1993) · IEEE Transactions on Power Electronics · doi:10.1109/63.261002 · Cited by 174
Physics-based models of power semiconductor devices for the circuit simulator SPICE
Kraus, R., Türkes, P., & Sigg, J. (2002) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.1998.703414 · Cited by 112
Static and dynamic behavior of paralleled IGBTs
Letor, R. (1992) · IEEE Transactions on Industry Applications · doi:10.1109/28.126748 · Cited by 86
Investigation of gate voltage oscillations in an IGBT module under short circuit conditions
Ohi, T., Iwata, A., & Arai, K. (2003) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/psec.2002.1023065 · Cited by 28
A simple power diode model with forward and reverse recovery
Ma, C., & Lauritzen, P. O. (2002) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.1991.162708 · Cited by 23
Advanced electrothermal Spice modelling of large power IGBTs
Azar, R., Udrea, F., Ng, W. T., Dawson, F. P., Findlay, W. J., Waind, P., & Amaratunga, G. A. J. (2004) · IEE Proceedings - Circuits Devices and Systems · doi:10.1049/ip-cds:20040448 · Cited by 17
Self-citationOhi, T., Horiguchi, T., Okuda, T., Kikunaga, T., & Matsumoto, H. (2003) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias.1999.805980 · Cited by 13
Schellmanns, A., Keradec, J. P., & Schanen, J. (2002) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias.2000.882609 · Cited by 13
PSPICE-compatible electrical equivalent circuit for busbars
Besacier, M., Schanen, J., Roudet, J., Suau, P., & Crébier, J.-C. (2002) · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · doi:10.1109/apec.2000.822603 · Cited by 8
Advanced electro-thermal SPICE modeling of large power IGBTs
Azar, R., Udrea, F., Ng, W. T., Dawson, F. P., Findlay, W. J., Waind, P., & Amaratunga, G. (2004) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2003.1225285 · Cited by 3
Self-citation
Research works printed but not linked: 5
- sen, 2002, Skin Effect Models For Transmission Line Structures Using Generic SPICE Simulators
- mauder, 1997, Investigation of the Static and Dynamic Current Distribution in Paralleled IGBT Modules
- xing, 2007, Analysis of Electrical Layout in IGBT Modules
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- clavel, 1994, electromagnetic modelling of a power module case, Proc IEEE EuroEM Conf, 1750
Cited by
Chen, Z., Boroyevich, D., & Burgos, R. P. (2010) · International Power Electronics Conference (IPEC) · doi:10.1109/ipec.2010.5543851 · Cited by 245
Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices
Chen, Z. (2009) · VTechWorks (Virginia Tech) · Cited by 189
Matallana, A., Ibarra, E., Ropero, I. L., Andreu, J., Gárate, J. I., Jordà, X., & Rebollo, J. (2019) · Renewable and Sustainable Energy Reviews · doi:10.1016/j.rser.2019.109264 · Cited by 181
Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current
Zhou, S., Zhou, L., & Sun, P. (2012) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2012.2210249 · Cited by 148
Abdi, B., Ranjbar, A. H., Gharehpetian, G. B., & Milimonfared, J. (2009) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2009.2014306 · Cited by 96
Metadata
- Authors
- Azar, R., Udrea, R., Ng, W. T., Dawson, F., Findlay, W., & Waind, P.
- Affiliations
- SNC-Lavalin (Canada) (CA)
- University of Cambridge (GB)
- University of Toronto (CA)
- Dynex Semiconductor (United Kingdom) (GB)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2008-01
- Volume
- 23
- Issue
- 1
- Pages
- 206-217
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W2130018352
- Semantic Scholar
- 85a20f6203d29f82e5136641e2f56ef941142a19
- Cited by
- 40
- References
- 10
- Citations by year
- 2024: 3 · 2022: 2 · 2021: 2 · 2020: 3 · 2019: 3 · 2018: 2 · 2017: 3 · 2016: 1 · 2015: 4 · 2014: 3 · 2013: 3 · 2012: 3
- FWCI
- 2.19
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Cambridge University Engineering Department Publications Database (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Compatibility and Noise Suppression
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Keywords
- current sharing, skin depth, copper interconnects, bonding wires, reverse recovery current, threshold voltage variation, injection efficiency, junction temperature, electromagnetic analysis, PSpice simulation, crosstalk, ground bounce, mutual inductance
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
