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Cited by 66

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Dynamic Electrothermal Model of Paralleled IGBT Modules With Unbalanced Stray Parameters

Tang, Yunyu, Ma, Hao·2017·IEEE Transactions on Power Electronics
DOI 10.1109/tpel.2016.2542198
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Citations

Cites

Research works printed but not linked: 38

  1. pramod, 0, A online Vce measurement and temperature estimation method for high power IGBT modules in normal PWM operation, Proc Power Electron Conf, 2850
  2. pramod, 0, A real time measurement of junction temperature variation in high power IGBT modules for wind power converter application, Proc Int Conf Integr Power Electron Syst, 1
  3. 10.1109/63.76804 · DOI
  4. linder, 2006, Power Semiconductors, 10.1201/9781482293005 · DOI
  5. xu, 2002, Power loss and junction temperature analysis of power semiconductor devices, IEEE Trans Ind Appl, 38, 1426, 10.1109/TIA.2002.802995 · DOI
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  7. 10.1109/STHERM.2004.1291304 · DOI
  8. 10.1109/63.60690 · DOI
  9. 10.1109/TPEL.2011.2125803 · DOI
  10. tang, 0, An improved analytical IGBT model for loss calculation including junction temperature and stray inductance, Proc 24th Int Symp Ind Electron, 227
  11. 10.1109/63.321038 · DOI
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  13. 10.1109/TPEL.2003.816194 · DOI
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  15. monti, 0, Fuzzy-based black-box approach to IGBT modeling, Proc IEEE Int Conf Electron Circuit Syst, 2, 1147
  16. 10.1109/TPWRD.2004.839726(410) 2 · DOI
  17. 10.1109/TIA.2010.2071190 · DOI
  18. 10.1109/TPEL.2005.869743 · DOI
  19. 10.1109/TPEL.2007.915621 · DOI
  20. 10.1109/APEC.1998.647735 · DOI
  21. nan, 2014, Dynamic characterization of parallel-connected high-power IGBT modules, IEEE Trans Ind Appl, 51, 539
  22. 10.1109/EPE.2013.6631852 · DOI
  23. schlapbach, 0, Dynamic paralleling problems in IGBT module construction and application, Proc Int Conf Integr Power Electron Syst, 1
  24. 10.1109/TPEL.2010.2087394 · DOI
  25. zhu, 0, A simple method to evaluate substrate layout for power modules, Proc Int Conf Integr Power Electron Syst, 1
  26. 10.1109/28.287517 · DOI
  27. du, 2010, Transient electrothermal simulation of power semiconductor devices, IEEE Trans Power Electron, 25, 237, 10.1109/TPEL.2009.2029105 · DOI
  28. 10.1109/TPEL.2009.2036728 · DOI
  29. 10.1109/IAS.2002.1042811 · DOI · Paper page
  30. 10.1109/TPEL.2011.2148729 · DOI
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  38. 10.1109/TCPMT.2014.2353695 · DOI

Cited by

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Metadata

Authors
Tang, Y., & Ma, H.
Venue
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2017-02
Volume
32
Issue
2
Pages
1385-1399
ISSN
  • 0885-8993
  • 1941-0107
DOI
10.1109/tpel.2016.2542198
Cited by
66
References
1
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)
Funders
  • National High Technology Research and Development Program of China (SS2012AA053602)
  • National Natural Science of China (51337009)

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