The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke
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“Although the Rds_on has a positive coefficient to the junction temperature, which helps to mitigate steady-state imbalance current, the sensitivity of the temperature dependence of Rds_on to junction temperature is not enough compared to its Si counterpart, thus imbalance selfsuppression effect is limited [8], [9].”
From An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules (2023) · cites this paper as [8]
In the citing paper
“The variation in drain-to-source on-state resistance, i.e., Rds_on, also contributes to steady-state imbalance current.”
From An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules (2023) · cites this paper as [8]
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Review of Silicon Carbide Power Devices and Their Applications
She, X., Huang, A. Q., Lucia, O., & Ozpineci, B. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2652401 · Cited by 1,773
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
Li, H., Munk-Nielsen, S., Wang, X., Maheshwari, R., Beczkowski, S., Uhrenfeldt, C., & Franke, W.-T. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2408054 · Cited by 306
Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs
Griffo, A., Wang, J., Colombage, K., & Kamel, T. (2018) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2739687 · Cited by 175
Research works printed but not linked: 32
- 10.1049/iet-pel.2017.0203 · DOI
- 10.1109/TPEL.2016.2581766 · DOI
- 10.1109/ECCE.2017.8096552 · DOI
- wang, 0, Wide bandgap based power electronics, Proc IEEE Appl Power Electron Conf, 29
- 10.1007/978-0-387-47314-7 · DOI
- 10.1109/TPEL.2017.2775665 · DOI
- 10.1109/TIA.2015.2456422 · DOI
- 10.1109/TIA.2016.2587098 · DOI
- 10.1016/j.rser.2017.04.096 · DOI
- 10.1109/TPEL.2013.2281084 · DOI
- li, 2015, Parallel Connections of Silicon Carbide MOSFETs for Multichip Power Modules
- li, 0, Circuit mismatch and current coupling effect influence on paralleling SiC MOSFETs in multichip power modules, Proc PCIM-Europe, 1
- fabre, 2016, Parallel connection of 1200-V/100-A SiC-MOSFET half-bridge modules, IEEE Trans Ind Appl, 52, 1669
- 10.1109/TIE.2015.2500187 · DOI · Paper page
- 10.1109/TPEL.2015.2477831 · DOI · Paper page
- 10.1109/TPEL.2016.2553133 · DOI
- 10.1109/TIE.2017.2738718 · DOI
- 10.1109/TIE.2017.2716868 · DOI
- 10.1109/TPEL.2018.2867272 · DOI
- 10.1109/TPEL.2016.2646323 · DOI
- 10.1109/TIE.2017.2696490 · DOI
- 10.1109/TPEL.2013.2295774 · DOI
- 10.1109/TPEL.2012.2206611 · DOI
- 10.1109/JPROC.2017.2687701 · DOI
- 10.1109/TPEL.2013.2283083 · DOI
- 10.1109/JPROC.2015.2495331 · DOI · Paper page
- 10.1109/TPEL.2016.2631447 · DOI
- 10.1109/ICIT.2015.7125483 · DOI
- 10.1109/ECCE.2014.6954042 · DOI
- 10.1109/TPEL.2016.2562030 · DOI
- 10.1109/TPEL.2016.2553133 · DOI
- 10.1109/TPEL.2017.2655496 · DOI
Cited by
Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions
Li, H., Zhao, S., Wang, X., Ding, L., & Mantooth, H. A. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3278270 · Cited by 135
Yang, F., Lixin, J., Wang, L., Zhang, F., Wang, B., Zhao, C., Wang, J., Bayer, C., & Ferreira, J. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2021.3106316 · Cited by 80
An Effective Current Balancing Method for Inverters With Paralleled Silicon Carbide Power Modules
Lin, N., Zhao, Y., & Mantooth, H. A. (2023) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2023.3306750 · Cited by 13
Metadata
- Authors
- Zeng, Z., Zhang, X., & Zhang, Z.
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2020-02
- Volume
- 67
- Issue
- 2
- Pages
- 1508-1519
- ISSN
- 0278-0046
- 1557-9948
- Cited by
- 161
- References
- 3
- Licence
- Funders
- Chinese National Natural Science Foundation (51607016)
- Chinese National Key Research & Development Program (2017YFB0102 303)
- Singapore ACRF Tier 1 (RG 85/18)
- SCOPES
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- CoChat. (2026). Citation check: Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke. https://app.cochat.ai/papers/10.1109/tie.2019.2901655
- The paper
- Zeng, Z., Zhang, X., & Zhang, Z. (2020). Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke. IEEE Transactions on Industrial Electronics. https://doi.org/10.1109/tie.2019.2901655
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.