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Cited by 36Silicon Carbide Semiconductor TechnologiesMultilevel Inverters and ConvertersSemiconductor materials and devices

The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.

Experimental Investigations on Current Sharing Characteristics of Parallel Chips Inside Press-Pack IGBT Devices

Peng, Cheng, Li, Xuebao, Fan, Jiayu, Zhao, Zhibin, Tang, Xinling, Cui, Xiang·2022·IEEE Transactions on Power Electronics
DOI 10.1109/tpel.2022.3164544
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Abstract

Press-pack insulated gate bipolar transistor (IGBT) devices have multiple chips paralleled to enhance their power density. However, the current imbalance among chips limits the increase of the power, which is mainly attributed to external factors, like stray inductance, temperature, and mechanical pressure. Besides, for the difficulties in decoupling multiple external factors, the current imbalance in press-pack IGBT devices has been extensively studied by simulation, and lack of experimental investigations. In this article, a multifactor decoupling experimental approach for the current sharing characteristics is proposed. The stray inductance, temperature, and mechanical pressure of the two parallel branches can be adjusted independently for investigating chips’ current sharing. Then, the experimental platform for the parallel 3.3 kV/50 A IGBT chips under differentiated external factors is implemented. Measured results show that the stray inductance affects the transient current sharing during turn-ongreatly, and the maximum current imbalance can reach 25.46%. The temperature mainly affects the steady state and the maximum current imbalance is 11.7%. Otherwise, mechanical pressure is negligible on the steady and transient current imbalances, which are less than 3%. Finally, the influence mechanisms of the external factors are proposed to explain the current sharing characteristics of parallel chips.

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Citations

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Research works printed but not linked: 2

  1. Peng, 2021, Design and implementation of an experimental platform for dynamic characteristics of press-pack IGBT chip, Trans. China Electron. Soc., 36, 2471
  2. Schrader, 2018, Dynamic current sharing and gate feedback during turn-OFF of paralleled IGBTs, 1

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Metadata

Authors
Peng, C., Li, X., Fan, J., Zhao, Z., Tang, X., & Cui, X.
Affiliations
  • North China Electric Power University (CN)
  • State Grid Corporation of China (China) (CN)
ORCID
Venue
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2022-09
Volume
37
Issue
9
Pages
10672-10680
ISSN
  • 0885-8993 (ISSN-L)
  • 1941-0107
DOI
10.1109/tpel.2022.3164544
OpenAlex
W4226060470
Cited by
36
References
20
Citations by year
2026: 5 · 2025: 11 · 2024: 9 · 2023: 8 · 2022: 3
FWCI
2.11
Type
journal article
Language
en
Open access
closed
Licence
Locations
IEEE Transactions on Power Electronics (publishedVersion)
Funders
  • National Natural Science Foundation of China
  • State Grid Corporation (U1766219)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
Keywords
press-pack IGBT, current sharing, current imbalance, parasitic inductance, temperature effects, mechanical pressure, turn-on transient, power density

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CoChat. (2026). Citation check: Experimental Investigations on Current Sharing Characteristics of Parallel Chips Inside Press-Pack IGBT Devices. https://app.cochat.ai/papers/10.1109/tpel.2022.3164544
The paper
Peng, C., Li, X., Fan, J., Zhao, Z., Tang, X., & Cui, X. (2022). Experimental Investigations on Current Sharing Characteristics of Parallel Chips Inside Press-Pack IGBT Devices. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2022.3164544

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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