The DOI matches its Crossref record; 20 of the 20 references it cites were found in a registry or an index.
Experimental Investigations on Current Sharing Characteristics of Parallel Chips Inside Press-Pack IGBT Devices
Abstract
Press-pack insulated gate bipolar transistor (IGBT) devices have multiple chips paralleled to enhance their power density. However, the current imbalance among chips limits the increase of the power, which is mainly attributed to external factors, like stray inductance, temperature, and mechanical pressure. Besides, for the difficulties in decoupling multiple external factors, the current imbalance in press-pack IGBT devices has been extensively studied by simulation, and lack of experimental investigations. In this article, a multifactor decoupling experimental approach for the current sharing characteristics is proposed. The stray inductance, temperature, and mechanical pressure of the two parallel branches can be adjusted independently for investigating chips’ current sharing. Then, the experimental platform for the parallel 3.3 kV/50 A IGBT chips under differentiated external factors is implemented. Measured results show that the stray inductance affects the transient current sharing during turn-ongreatly, and the maximum current imbalance can reach 25.46%. The temperature mainly affects the steady state and the maximum current imbalance is 11.7%. Otherwise, mechanical pressure is negligible on the steady and transient current imbalances, which are less than 3%. Finally, the influence mechanisms of the external factors are proposed to explain the current sharing characteristics of parallel chips.
Overview
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
Citations
Cites
IGBT History, State-of-the-Art, and Future Prospects
Iwamuro, N., & Laska, T. (2017) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2017.2654599 · Cited by 401
Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs
Deng, E., Zhao, Z., Lin, Z., Han, R., & Huang, Y. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2017.2749521 · Cited by 122
Self-citationLi, H., Zhou, W. J., Wang, X., Munk‐Nielsen, S., Li, D., Wang, Y., & Dai, X. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2797326 · Cited by 106
Mechanical analysis of press-pack IGBTs
Poller, T., Basler, T., Hernes, M., D’Arco, S., & Lutz, J. (2012) · Microelectronics Reliability · doi:10.1016/j.microrel.2012.06.079 · Cited by 78
Poller, T., D’Arco, S., Hernes, M., Årdal, A. R., & Lutz, J. (2013) · Microelectronics Reliability · doi:10.1016/j.microrel.2013.07.130 · Cited by 73
Press-pack IGBTs for HVDC and FACTs
Limited, D. S., Simpson, R., Plumpton, A., Limited, D. S., Varley, M., Limited, D. S., Tonner, C., Limited, D. S., Taylor, P., Limited, D. S., et al. (2017) · CSEE Journal of Power and Energy Systems · doi:10.17775/cseejpes.2016.01740 · Cited by 68
Investigation on the Effects of Unbalanced Clamping Force on Multichip Press Pack IGBT Modules
Lai, W., Li, H., Chen, M., Kang, S., Ren, H. J., Yao, R., Pan, L., & Jin, R. (2018) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2018.2876768 · Cited by 55
Wu, R., Smirnova, L., Wang, H., Iannuzzo, F., & Blaabjerg, F. (2015) · 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · doi:10.1109/icpe.2015.7167881 · Cited by 47
Innovative press pack modules for high power IGBTs
Kaufmann, S., Lang, T., & Chokhawala, R. (2002) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2001.934559 · Cited by 45
Pressure contact assembly technology of high power devices
Matsuda, H., Hiyoshi, M., & Kawamura, N. (2002) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.1997.601422 · Cited by 39
Zhang, Y., Deng, E., Zhao, Z., Chen, J., Zhao, Y., Guo, J., & Cui, X. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3024815 · Cited by 38
Self-citationOptimization of the current distribution in press-pack high power IGBT modules
Musing, A. M., Ortiz, G., & Kolar, J. W. (2010) · International Power Electronics Conference (IPEC) · doi:10.1109/ipec.2010.5543573 · Cited by 34
Investigation of parallel operation of IGBTs
Nelson, J. J., Venkataramanan, G., & Beihoff, B. C. (2003) · Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) · doi:10.1109/ias.2002.1042811 · Cited by 30
Overvoltage Estimation by Stray Inductances During Turn-off of a 500 kV/25 kA DC Circuit Breaker
Dongye, Z., Qi, L., Liu, K., Wei, X., Lu, F., & Cui, X. (2020) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2020.3046007 · Cited by 29
Self-citationCurrent sharing of IGBT modules in parallel with thermal imbalance
Wang, X., Zhao, Z., & Yuan, L. (2010) · 2010 IEEE Energy Conversion Congress and Exposition · doi:10.1109/ecce.2010.5618253 · Cited by 26
Self-citationOmura, I., Domon, T., Miyake, E., Sakiyama, Y., Ogura, T., Hiyoshi, M., Yamano, N., & Ohashi, H. (2004) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2003.1225243 · Cited by 16
Research and measurement of chip current imbalance in IGBT module with multiple chips in parallel
Kong, L., Zhang, J., Qiu, Z., & Meng, J. (2013) · International Conference on Electrical Machines and Systems (ICEMS) · doi:10.1109/icems.2013.6713304 · Cited by 15
Investigation of flat-pack IGBT reliability
Kirihata, H., Takahashi, Y., Wakimoto, H., & Niino, F. (2002) · IEEE Industry Applications Society Annual Meeting (IAS) · doi:10.1109/ias.1998.730270 · Cited by 10
Impact of the anode current of an IGBT on the gate voltage
Bock, B., & Steimel, A. (2005) · IEEE Power Electronics Specialists Conference (PESC) · doi:10.1109/pesc.2004.1355300 · Cited by 2
(2010) · International Conference on Integrated Power Electronics Systems (CIPS)
Research works printed but not linked: 2
- Peng, 2021, Design and implementation of an experimental platform for dynamic characteristics of press-pack IGBT chip, Trans. China Electron. Soc., 36, 2471
- Schrader, 2018, Dynamic current sharing and gate feedback during turn-OFF of paralleled IGBTs, 1
Cited by
Fu, S., Li, X., Lin, Z., Zhao, Z., Cui, X., Tang, X., & Wan, J. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3205353 · Cited by 48
Self-citationLu, Y., Zhang, X., Shen, H., Zhang, W., & Qi, L. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3292263 · Cited by 15
Breaking Current Balance Enhancement for Parallel IGBT Modules in DC Circuit Breaker
Wen, W., Jin, H., Li, B., Li, P., Liu, H., & Li, B. (2023) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2023.3315270 · Cited by 15
Comparisons of Two Turn-off Failures Under Clamped Inductive Load in Planar FS 3.3 kV/50 A IGBT Chip
Fan, J., Wang, Y., He, F., Gao, M., Zhao, Z., Li, X., Cui, X., & Chen, Z. (2022) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2022.3192922 · Cited by 14
Self-citationImpacts of the Pressure Distribution on Dynamic Avalanche in Single Press-Pack IGBT Chip
Li, T., Wang, Y., Zhang, Y., Fan, J., Li, X., Qi, L., & Cui, X. (2024) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2024.3381921 · Cited by 11
Self-citation
Metadata
- Authors
- Peng, C., Li, X., Fan, J., Zhao, Z., Tang, X., & Cui, X.
- Affiliations
- North China Electric Power University (CN)
- State Grid Corporation of China (China) (CN)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2022-09
- Volume
- 37
- Issue
- 9
- Pages
- 10672-10680
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W4226060470
- Cited by
- 36
- References
- 20
- Citations by year
- 2026: 5 · 2025: 11 · 2024: 9 · 2023: 8 · 2022: 3
- FWCI
- 2.11
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Funders
- National Natural Science Foundation of China
- State Grid Corporation (U1766219)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- press-pack IGBT, current sharing, current imbalance, parasitic inductance, temperature effects, mechanical pressure, turn-on transient, power density
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
