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Cited by 26

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Current sharing of IGBT modules in parallel with thermal imbalance

Wang, Xuesong, Zhao, Zhengming, Yuan, Liqiang·2010·2010 IEEE Energy Conversion Congress and Exposition

Abstract

For large current, switching devices such as MOSFET and IGBT, often have to be connected in parallel. Due to this reason, derating and preselection of the switching devices become necessary to develop high-power converters. The current imbalance can be produced by stray inductances, device characteristic difference or asymmetric circuit. Moreover, thermal imbalance is another important reason for current balancing. The static and transient characteristics of an IGBT vary sensitively with its junction temperature. This paper focuses on the current sharing of IGBTs in parallel with thermal imbalance. In this paper, an active gate control method which can achieve current balancing of the IGBTs in parallel with thermal imbalance, is explained and verified by experiments. This method can be applied to an actual 160kW/380V power electronics converter prototype for improving the utilization of the switching devices and enhancing system reliability.

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Crossref · 10.1109/ecce.2010.5618253

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Research works printed but not linked: 13

  1. board, 1984, the optimization of on-resistance in vertical dmos power devices with linear and hexagonal surface geometries, IEEE Transactions on Electron Devices, 31, 75, 10.1109/T-ED.1984.21476 · DOI
  2. darwish, 1984, optimization of breakdown voltage and on-resistance of vdmos transistors, IEEE Transactions on Electron Devices, 31, 1769, 10.1109/T-ED.1984.21786 · DOI
  3. 10.1109/T-ED.1971.17207 · DOI
  4. 10.1109/T-ED.1984.21773 · DOI
  5. 10.1109/PESC.1996.548751 · DOI · Paper page
  6. 10.1109/63.761687 · DOI
  7. 10.1109/28.821809 · DOI
  8. sze, 1981, Physics of Semiconductor Dvices
  9. 10.1109/TMAG.2008.2008604 · DOI
  10. 10.1109/28.126748 · DOI
  11. 10.1109/TPS.2008.2003971 · DOI · Paper page
  12. zhao, 2007, Research on the feasibility of balancing on-state current for paralleled IGBTs by controlling gate voltage, Power Electronics, 41, 101
  13. qiao, 2006, Development of high power intelligent module based on paralleled IGBTs, Transactions of China Electrotechnical Society, 21, 90

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Metadata

Authors
Wang, X., Zhao, Z., & Yuan, L.
Venue
2010 IEEE Energy Conversion Congress and Exposition
Publisher
IEEE
Published
2010-09
Pages
2101-2108
Cited by
26
References
1

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CoChat. (2026). Citation check: Current sharing of IGBT modules in parallel with thermal imbalance. https://app.cochat.ai/papers/10.1109/ecce.2010.5618253
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Wang, X., Zhao, Z., & Yuan, L. (2010). Current sharing of IGBT modules in parallel with thermal imbalance. 2010 IEEE Energy Conversion Congress and Exposition. https://doi.org/10.1109/ecce.2010.5618253

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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