Cited by 4Heat Transfer and OptimizationSilicon Carbide Semiconductor TechnologiesHeat Transfer Mechanisms

Single and Double-Sided Jet Impingement Cooling for SiC-Based Power Modules

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Barua, Himel, Chowdhury, Shajjad, Wilkins, Jon, Ozpineci, Burak·2023·2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

Abstract

Efficient thermal management of power electronics systems is crucial for higher reliability. With the miniaturization of systems, high-loss-density electronics require cooling systems that can extract a large amount of heat. This study explored a liquid-jet-impingement-based direct substrate cooling system for single-sided and double-sided cooling to improve heat extraction efficiency and improve the power density by reducing the volume and mass. The cooling system was implemented for a SiC-based direct bonded copper substrate. Numerical simulations were performed to determine the effects of nozzle diameter, the number of nozzles, and nozzle array orientation on single-sided cooling and thermal performance gain over double-sided cooling. A novel manifold design was proposed that reduced the volume and mass of the manifold and still achieved the target power density. The performance of the proposed design was compared with the pin-fin-based cooling system used in the BMW I3 module, and a comparative analysis was done.

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Crossref · 10.1109/wipda58524.2023.10382234

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  • Jet impingement cooling uses high-speed jets from micro-nozzles to target hotspots, achieving high heat-transfer coefficients, and is effective for thermally demanding devices such as GaN MMIC power amplifiers.

    “Jet impingement cooling uses high-speed jets from micro-nozzles to target hotspots, achieving high HTC; it is effective for thermally demanding devices such as GaN monolithic microwave integrated circuit (MMIC) power amplifiers [29,52-54].”

    From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [53]

    The Introduction reports that liquid-jet impingement can achieve high heat-transfer coefficients, and the Impingement zone section describes placing nozzles beneath heat-producing devices to increase local heat transfer. The Power Module Layout studies SiC devices with 1 mm nozzles; the paper does not establish effectiveness for GaN MMIC power amplifiers. (LLM, conf=0.88)

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Research works printed but not linked: 2

  1. "Dielectric jet impingement cooling of electronic chips," in Proc. 34th ASME Nat. Heat Transfer Conf., 2000.
  2. C. Wang, L. Zheng, L. Han, H. Fang, and J. Xu, "Thermal performance investigation of three-dimensional structure unit in double-sided cooling IGBT module," in Proceedings of the Electronic Packaging Technology Conference, Oct. 2014, pp. 622-625, doi: 10.1109/ICEPT.2014.6922733. · DOI

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Authors
Barua, H., Chowdhury, S., Wilkins, J., & Ozpineci, B.
Affiliations
Oak Ridge National Laboratory (US)
Venue
2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Publisher
IEEE
Published
2023-12-04
Pages
1-6
OpenAlex
W4390806889
Cited by
4
References
15
Citations by year
2026: 1 · 2025: 2 · 2024: 1
FWCI
3.54
Type
conference paper
Language
en
Open access
Locations
  • IEEE Workshop on Wide Bandgap Power Devices and Applications (publishedVersion)
  • OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (submittedVersion)
Funders
Vehicle Technologies Office
Topics
  • Physical Sciences › Engineering › Mechanical Engineering › Heat Transfer and Optimization
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Mechanical Engineering › Heat Transfer Mechanisms
Keywords
jet impingement cooling, liquid jet impingement, SiC power modules, direct bonded copper substrate, double-sided cooling, thermal management, power electronics cooling, manifold design, power density, heat removal

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