High Temperature Characterization and Degradation Test of a Cascode Gallium Nitride Field Effect Transistor
Abstract
Gallium Nitride (GaN) is a wide bandgap semiconductor material known for its exceptional performance in high-temperature and high-voltage environments. This makes GaN a preferred material for field-effect transistors (FETs) used in demanding applications. While GaN FETs are theoretically capable of operating at temperatures exceeding $200^{\circ} \mathrm{C}$, practical applications often limit their maximum junction temperature to around $150^{\circ} \mathrm{C}$, primarily due to packaging limitations, such as those associated with the standard TO-247 package. This paper presents an experimental analysis of the high-temperature performance of GaN FETs, focusing on how elevated temperatures influence various operational parameters. Key areas of investigation include the impact on output characteristics, on-resistance ($\mathrm{R}_{\mathrm{dson}}$), threshold voltage ($\mathrm{V}_{\mathrm{th}}$), transfer characteristics, and gate leakage currents. Furthermore, the study examines potential degradation effects that may result from prolonged operation at elevated temperatures. The insights gained from this study are crucial for advancing the deployment of GaN FETs in applications that demand robust performance under extreme conditions, including automotive, aerospace, and industrial power systems. Ultimately, the findings will contribute to the development of more reliable and efficient power electronics, pushing the boundaries of GaN technology.
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Cascode GaN devices, which stack a GaN HEMT and a Si MOSFET to reduce parasitics, introduce a complex thermal path that can elevate junction temperature and must be managed carefully.
“Even cascode GaN devices-which stack a GaN HEMT and a Si MOSFET to reduce parasitics-introduce a complex thermal path that can elevate junction temperature and must be managed carefully [22,23].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [22]
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34 · see citing works
“Even cascode GaN devices—which stack a GaN HEMT and a Si MOSFET to reduce parasitics—introduce a complex thermal path that can elevate junction temperature and must be managed carefully [22,23]. showing the AlGaN/GaN heterostructure and key device regions [1].”
- Authors
- Rahman, M. D., Hasan, A. S. M. K., Mantooth, H. A., & Song, X.
- Affiliations
- University of Arkansas at Fayetteville (US)
- Venue
- 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
- Publisher
- IEEE
- Published
- 2024-11-04
- Pages
- 1-6
- OpenAlex
- W4405103386
- Cited by
- 3
- References
- 15
- Citations by year
- 2025: 3
- FWCI
- 3.40
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE Workshop on Wide Bandgap Power Devices and Applications (publishedVersion)
- Funders
- National Science Foundation
- Topics
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Ga2O3 and related materials
- Keywords
- high-temperature performance, device degradation, threshold voltage shift, on-resistance, gate leakage current, transfer characteristics, TO-247 package, power electronics reliability, wide bandgap semiconductors
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