Rapid Microwave Annealing of Amorphous Lead Zirconate Titanate Thin Films Deposited by Sol‐Gel Method on La NiO 3 / SiO 2 / Si Substrates
Abstract
The heating behavior of La NiO 3 ( LNO ) films on SiO 2 / Si substrate heated by 2.45 GHz microwave irradiation in the microwave magnetic field was first investigated, and then amorphous Pb ( Zr 0.52 Ti 0.48 ) O 3 ( PZT ) thin films were deposited on LNO ‐coated SiO 2 / Si substrates by a sol‐gel method and crystallized in the microwave magnetic field. The crystalline phases and microstructures as well as the electrical properties of the PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT films with a highly (100)‐preferred orientation can be obtained by microwave annealing at 700°C for only 180 s of total processing time, and have good electrical properties. The results demonstrated that conductive metal oxide LNO as a bottom electrode layer is an advantage for the crystallization of PZT thin films by microwave irradiation in the microwave magnetic field.
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The creation of a well-defined columnar grain structure in CSD LNO films is challenging to achieve on an amorphous substrate.
“The creation of a well-defined columnar grain structure in CSD (Chemical Solution Deposition) LNO films is challenging to achieve on an amorphous substrate.”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [42]
Most authors who studied CSD of LNO films on substrates of various structures reported films with a porous, polycrystalline structure and fine equiaxed grains.
“Most of the authors who studied the CSD of LNO films on substrates of various structures reported films with a porous, polycrystalline structure and fine equiaxed grains [19,24,41,42].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [42]
Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film-substrate interface.
“Columnar grain growth in CSD films is usually caused by heterogeneous nucleation at the film–substrate interface [34,35,36,37,38,39,40,41,42,43,44,45].”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [42]
Films with equiaxed grains have somewhat higher resistivity values ρ = 900-1050 μOhm·cm for the CSD technique.
“Films with equiaxed grains have somewhat higher resistivity values ρ = 900–1050 µOhm·cm for the CSD technique [19,42], this work.”
From Control of Columnar Grain Microstructure in CSD LaNiO3 Films (2023) · cites this paper as [42]
Cited by
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Control of Columnar Grain Microstructure in CSD LaNiO3 Films
Atanova, A. V., Seregin, D. S., Zhigalina, O. M., Khmelenin, D. N., Orlov, G. A., Turkina, D. I., Sigov, A. S., & Vorotilov, K. A. (2023) · Molecules · doi:10.3390/molecules28041938 · Cited by 5 · see citing works
- Authors
- Chen, Y. N., & Wang, Z. J.
- Affiliations
- Chinese Academy of Sciences (CN)
- Corresponding author
- Wang, Z. J.
- Venue
- Journal of the American Ceramic Society
- Publisher
- Wiley
- Published
- 2012-11-09
- Volume
- 96
- Issue
- 1
- Pages
- 90-95
- ISSN
- 0002-7820 (ISSN-L)
- 1551-2916
- OpenAlex
- W2159593053
- Cited by
- 13
- References
- 0
- Citations by year
- 2026: 1 · 2023: 2 · 2021: 1 · 2019: 1 · 2018: 3 · 2016: 2 · 2015: 2 · 2014: 1
- FWCI
- 0.44
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of the American Ceramic Society (publishedVersion)
- Funders
- National Natural Science of foundation of China (51072202, 51172238)
- National Basic Research Program (2010CB934603)
- Research Program of Science and Technology of Shenyang City of China (P112538)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Microwave Dielectric Ceramics Synthesis
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- microwave annealing, lead zirconate titanate, sol-gel deposition, microwave magnetic field, microwave-assisted crystallization, perovskite phase, (100) preferred orientation, electrical properties, SiO2/Si substrate
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