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Alteration of Cu conductivity in the size effect regime

Rossnagel, S. M., Kuan, T. S.·2004·Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Abstract

The resistivity of thin Cu films depends on film thickness as the dimensions approach the electron mean-free-path for Cu of 39 nm. The key size-dependent contributions are from electron–surface scattering, grain boundary scattering, and surface roughness-induced scattering. Measurements with pseudoepitaxial Cu films deposited on Si have been undertaken to reduce effects of grain boundaries and surface roughness and suggest an electron-scattering parameter of p=0.12. Overlayers of metal films on the Cu generally increase the resistivity for Ta and Pt overlayers, and may reduce the resistivity for Au and Al. The resistivity increase may also be reversed if the overlayer oxidizes.

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Metadata

Authors
Rossnagel, S. M., & Kuan, T. S.
Venue
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Published
2004-01-01
Volume
22
Issue
1
Pages
240-247
ISSN
  • 1071-1023 (ISSN-L)
  • 1520-8567
OpenAlex
W2046530548
Cited by
457
References
0
FWCI
13.91
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Alteration of Cu conductivity in the size effect regime. https://app.cochat.ai/papers/10.1116/1.1642639
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Rossnagel, S. M., & Kuan, T. S. (2004). Alteration of Cu conductivity in the size effect regime. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. https://doi.org/10.1116/1.1642639

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.