Line edge roughness reduction for EUV self-aligned double patterning by surface modification on spin-on-carbon and tone inversion technique

Abstract

Extreme ultraviolet lithography (EUVL) has been adopted into high volume production for advanced logic device manufacturing. Due to the continuous size scaling requirement for interconnect fabrication, EUVL with self-aligned double patterning (SADP) formation has attracted substantial research attention. The current challenge in EUV SADP is the pattern transfer process from lithography to mandrel formation. In this step, the target critical dimension (CD) of the feature needs to shrink by half from the lithography CD during the etch process. The increasing aspect ratio during this etch potentially deteriorates the pattern validity and the line edge roughness (LER). In addition to these challenges, EUVL has a fundamental bottleneck due to stochastic effects, which can lead to device degradation by defect formation and edge placement error (EPE). LER of the line and space pattern is one of the main contributors to EPE. Effective methods of LER reduction in both process and integration are needed in order to reduce pattern variation and boost device performance. In our study, we examine a technique to reduce LER on the EUV SADP line pattern. This technique involves the surface modification on the spin-on carbon (SOC) layer in the patterning stack and tone inversion process. We had found a trend between surface hydrophobicity of the SOC and the EUV SADP LER performance. The condition that increased the hydrophobicity of the SOC resulted in a lower LER performance after tone inversion. The tested conditions include direct current superposition (DCS) function with H2 plasma, fluorocarbon plasma, and the combination of DCS with H2 plasma and trimethylsilane dimethylamine deposition. On 20-nm pitch EUV SADP, this technique shows 26% of LER improvement from lithography to SADP formation. PSD analysis recorded about 6% and 30% of the LER improvement at the correlation length of >200 nm and 200 to 30 nm, respectively. A demonstration of this technique for a further scaling to 15-nm pitch also shows an LER reduction of 30% from lithography to SADP formation.