High-NA EUV platform realization as next step in EUV technology
Abstract
To enable cost-effective scaling of technology nodes and extend Moore’s law for at least another decade, ASML has been developing the High NA EUV platform. With an increase of the numerical aperture (NA) from 0.33NA to 0.55NA, High NA EUV will bring multiple benefits to the semiconductor market, such as reduction of process complexity, yield improvement and higher resolution. This will be done while maximizing 0.33NA(NXE) and 0.55 NA (EXE) platforms commonality, making this an evolutionary step on EUV technology. This paper gives an overview of the progress and status of the first High NA EUV platform, the EXE:5000, through its different development and build phases.
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Next-generation EUV scanners with an NA of 0.55 (high-NA) will be used for research and development in 2024-2025 and in high-volume manufacturing in 2025-2026.
“the next generation of EUV scanners with an NA of 0.55, referred to as high-NA systems, will be used for research and development in 2024-2025 and in HVM in 2025-2026 35-37 .”
From Extreme ultraviolet lithography (2024) · cites this paper as [37]
Modern EUV scanners used in high-volume manufacturing have an NA of 0.33.
“Modern EUV scanners used in HVM have an NA of 0.33”
From Extreme ultraviolet lithography (2024) · cites this paper as [37]
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149 · see citing works
Self-citation
- Authors
- Garcia-Santaclara, J., Peeters, R., van Dongen, J., van Ballegoij, R., Lok, S., van Schoot, J., Gräupner, P., Kuerz, P., Mallmann, J., Stoorms, G., & Vanoppen, P.
- Affiliations
- ASML (Netherlands) (NL)
- Venue
- International Conference on Extreme Ultraviolet Lithography 2023
- Publisher
- SPIE
- Published
- 2023-11-22
- Pages
- 1
- OpenAlex
- W4388911973
- Cited by
- 5
- References
- 0
- Citations by year
- 2025: 2 · 2024: 3
- FWCI
- 2.45
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- International Conference on Extreme Ultraviolet Lithography (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Engineering › Biomedical Engineering › Advanced optical system design
- Keywords
- EUV lithography, numerical aperture, ASML, semiconductor lithography, device scaling, Moore's law, yield improvement
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