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Exploring EUV scanner design options enabled by free electron laser sources
Abstract
An accelerator-based free electron laser (FEL) source of 13.5nm light can, among other benefits, provide more power, polarized light and no out-of-band radiation. This paper explores how the extra power, polarized light and lack of out-of-band radiation could be used in future scanner designs. The differences between light generated from a laser-produced plasma (LPP) source and an FEL source are discussed. Rigorous mask simulation, OPC and source optimization are used to assess the impacts of polarization on contrast and process window for lines/spaces and multiple 2D patterns. Polarization is shown to provide contrast and process window benefits at half-pitches below 8nm. A full-field, isomorphic, 0.55NA scanner design is considered as a case study showcasing the benefits of FEL-based EUV light sources.
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EUV free electron laser sources have been proposed and would be capable of powering several scanners simultaneously with a power of 1 kW.
“As an alternative to laser -produced plasma sources, EUV free electron laser (FEL) sources 28 , 29 have also been proposed and would be capable of powering several scanners simultaneously with a power of 1 kW.”
From Extreme ultraviolet lithography (2024) · cites this paper as [29]
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Research works printed but not linked: 6
- Umstadter, 2023, EUV light source for high-NA and low-NA lithography, 12494, 124940Z, 10.1117/12.2657772 · DOI
- Hosler, 2015, Considerations for a free-electron laser-based extreme-ultraviolet lithography program, 9422, 94220D
- 10.1117/1.JMM.21.2.021210 · DOI
- Flagello, 2004, Optical lithography in the sub-50-nm regime, 5377, 21
- Adam, 2004, Polarization effects in immersion lithography, 5377, 329
- 10.1117/1.JMM.22.4.043202 · DOI
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Extreme ultraviolet lithography
Kazazis, D., Santaclara, J. G., van Schoot, J., Mochi, I., & Ekinci, Y. (2024) · Nature Reviews Methods Primers · doi:10.1038/s43586-024-00361-z · Cited by 149
Metadata
- Authors
- Pistor, T. V.
- Corresponding author
- Pistor, Thomas V.
- Venue
- Optical and EUV Nanolithography XXXVII
- Publisher
- SPIE
- Published
- 2024-04-10
- Pages
- 42
- OpenAlex
- W4394602245
- Cited by
- 6
- References
- 0
- Citations by year
- 2026: 3 · 2025: 3
- FWCI
- 4.08
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- SPIE Optical and EUV Nanolithography (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Photolithography Techniques
- Physical Sciences › Physics and Astronomy › Radiation › Advanced X-ray Imaging Techniques
- Physical Sciences › Physics and Astronomy › Atomic and Molecular Physics, and Optics › Advanced optical system design
- Keywords
- EUV lithography, free-electron laser, polarization, laser-produced plasma, optical proximity correction, source optimization, process window, line/space patterning, high numerical aperture
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