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Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

Nomura, Kenji, Ohta, Hiromichi, Ueda, Kazushige, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo·2003·Science

Abstract

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

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Metadata

Authors
Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., & Hosono, H.
Venue
Science
Published
2003-05-23
Volume
300
Issue
5623
Pages
1269-1272
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2092426063
Cited by
1,884
References
0
FWCI
42.57
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor. https://app.cochat.ai/papers/10.1126/science.1083212
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Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., & Hosono, H. (2003). Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor. Science. https://doi.org/10.1126/science.1083212

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.