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Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution
Abstract
We have probed the local thermoelectric power of semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals that the thermoelectric power changes its sign abruptly within 2 nanometers across the junction. Because thermoelectric power correlates with electronic structure, we can profile with nanometer spatial resolution the thermoelectric power, band structures, and carrier concentrations of semiconductor junctions that constitute the building blocks of thermoelectric, electronic, and optoelectronic devices.
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Cited by
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
Self-citationThermoelectricity in Semiconductor Nanostructures
Majumdar, A. (2004) · Science · doi:10.1126/science.1093164 · Cited by 981
Thermoelectricity in Molecular Junctions
Reddy, P., Jang, S.-Y., Segalman, R. A., & Majumdar, A. (2007) · Science · doi:10.1126/science.1137149 · Cited by 955
Gou, X., Xiao, H., & Yang, S. (2010) · Applied Energy · doi:10.1016/j.apenergy.2010.02.013 · Cited by 462
Metadata
- Authors
- Lyeo, H.-K., Khajetoorians, A. A., Shi, L., Pipe, K. P., Ram, R. J., Shakouri, A., & Shih, C. K.
- Venue
- Science
- Published
- 2004-02-06
- Volume
- 303
- Issue
- 5659
- Pages
- 816-818
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2090877930
- Cited by
- 176
- References
- 0
- FWCI
- 7.29
- Type
- journal article
- Language
- en
- Open access
- closed
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- Lyeo, H.-K., Khajetoorians, A. A., Shi, L., Pipe, K. P., Ram, R. J., Shakouri, A., & Shih, C. K. (2004). Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution. Science. https://doi.org/10.1126/science.1091600
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