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Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution

Lyeo, Ho-Ki, Khajetoorians, A. A., Shi, Li, Pipe, Kevin P., Ram, Rajeev J., Shakouri, Ali, Shih, C. K.·2004·Science

Abstract

We have probed the local thermoelectric power of semiconductor nanostructures with the use of ultrahigh-vacuum scanning thermoelectric microscopy. When applied to a p-n junction, this method reveals that the thermoelectric power changes its sign abruptly within 2 nanometers across the junction. Because thermoelectric power correlates with electronic structure, we can profile with nanometer spatial resolution the thermoelectric power, band structures, and carrier concentrations of semiconductor junctions that constitute the building blocks of thermoelectric, electronic, and optoelectronic devices.

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Metadata

Authors
Lyeo, H.-K., Khajetoorians, A. A., Shi, L., Pipe, K. P., Ram, R. J., Shakouri, A., & Shih, C. K.
Venue
Science
Published
2004-02-06
Volume
303
Issue
5659
Pages
816-818
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2090877930
Cited by
176
References
0
FWCI
7.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution. https://app.cochat.ai/papers/10.1126/science.1091600
The paper
Lyeo, H.-K., Khajetoorians, A. A., Shi, L., Pipe, K. P., Ram, R. J., Shakouri, A., & Shih, C. K. (2004). Profiling the Thermoelectric Power of Semiconductor Junctions with Nanometer Resolution. Science. https://doi.org/10.1126/science.1091600

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