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Cited by 2,634

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Observation of the Spin Hall Effect in Semiconductors

Kato, Y. K., Myers, R. C., Gossard, A. C., Awschalom, D. D.·2004·Science

Abstract

Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

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Crossref · 10.1126/science.1105514

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Metadata

Authors
Kato, Y. K., Myers, R. C., Gossard, A. C., & Awschalom, D. D.
Venue
Science
Published
2004-12-10
Volume
306
Issue
5703
Pages
1910-1913
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W1641250615
Cited by
2,634
References
1
FWCI
72.48
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Observation of the Spin Hall Effect in Semiconductors. https://app.cochat.ai/papers/10.1126/science.1105514
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Kato, Y. K., Myers, R. C., Gossard, A. C., & Awschalom, D. D. (2004). Observation of the Spin Hall Effect in Semiconductors. Science. https://doi.org/10.1126/science.1105514

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.