The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Breaking the Speed Limits of Phase-Change Memory
Abstract
Exploiting Defects in a Jam: Phase-change materials that can readily switch between crystalline and amorphous states are increasingly finding use in nonvolatile memory devices (see the Perspective byHewak and Gholipour). Using high-resolution transmission electron microscopy,Nam et al.(p.1561) show that for Ge 2 Sb 2 Te 5, the application of an electric field drives crystal dislocations in one direction, leading to their accumulation and eventual jamming, which causes the phase transition.Loke et al.(p.1566) found that by applying a constant low voltage to Ge 2 Sb 2 Te 5, they could accelerate its phase-switching speeds, without harming the long-term stability of the switched state.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Cited by
In-memory computing with resistive switching devices
Ielmini, D., & Wong, H.-S. P. (2018) · Nature Electronics · doi:10.1038/s41928-018-0092-2 · Cited by 2,298
“Both devices operate at moderate-high switching speed (typically below 100 ns and even in the sub-ns regime [26,27]).”
BackgroundIntegrated all-photonic non-volatile multi-level memory
Ríos, C., Stegmaier, M., Hosseini, P., Wang, D., Scherer, T., Wright, C. D., Bhaskaran, H., & Pernice, W. H. P. (2015) · Nature Photonics · doi:10.1038/nphoton.2015.182 · Cited by 1,312
Resistive switching materials for information processing
Wang, Z., Wu, H., Burr, G. W., Hwang, C. S., Wang, K. L., Xia, Q., & Yang, J. J. (2020) · Nature Reviews Materials · doi:10.1038/s41578-019-0159-3 · Cited by 1,214
An overview of phase-change memory device physics
Le Gallo, M., & Sebastian, A. (2020) · Journal of Physics D: Applied Physics · doi:10.1088/1361-6463/ab7794 · Cited by 460
Ultrafast Synaptic Events in a Chalcogenide Memristor
Li, Y., Zhong, Y., Xu, L., Zhang, J., Xu, X., Sun, H., & Miao, X. (2013) · Scientific Reports · doi:10.1038/srep01619 · Cited by 423
Metadata
- Authors
- Loke, D., Lee, T. H., Wang, W. J., Shi, L. P., Zhao, R., Yeo, Y. C., Chong, T. C., & Elliott, S. R.
- Venue
- Science
- Published
- 2012-06-22
- Volume
- 336
- Issue
- 6088
- Pages
- 1566-1569
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2115262483
- Cited by
- 838
- References
- 2
- FWCI
- 22.15
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Breaking the Speed Limits of Phase-Change Memory. https://app.cochat.ai/papers/10.1126/science.1221561
- The paper
- Loke, D., Lee, T. H., Wang, W. J., Shi, L. P., Zhao, R., Yeo, Y. C., Chong, T. C., & Elliott, S. R. (2012). Breaking the Speed Limits of Phase-Change Memory. Science. https://doi.org/10.1126/science.1221561
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
