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Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
Abstract
Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be “tuned” by varying the manganate stochiometry. A device with La 0.7 Ca 0.3 MnO 3 as the semiconductor and PbZr 0.2 Ti 0.8 O 3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.
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Citations
Cited by
Ferroelectric Analog Synaptic Transistors
Kim, M.-K., & Lee, J.-S. (2019) · Nano Letters · doi:10.1021/acs.nanolett.9b00180 · Cited by 594
Beegum, K. A. B., Sasi, S., Mathew, A., Asha, A. S., & Reshmi, R. (2021) · Physica Scripta · doi:10.1088/1402-4896/abea31 · Cited by 8
Metadata
- Authors
- Mathews, S., Ramesh, R., Venkatesan, T., & Benedetto, J.
- Venue
- Science
- Published
- 1997-04-11
- Volume
- 276
- Issue
- 5310
- Pages
- 238-240
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2072865736
- Cited by
- 614
- References
- 0
- FWCI
- 19.60
- Type
- journal article
- Language
- en
- Open access
- closed
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- Mathews, S., Ramesh, R., Venkatesan, T., & Benedetto, J. (1997). Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures. Science. https://doi.org/10.1126/science.276.5310.238
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
