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Cited by 594

The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.

Ferroelectric Analog Synaptic Transistors

Kim, Min-Kyu, Lee, Jang-Sik·2019·Nano Letters

Abstract

Neuromorphic computing is a promising alternative to conventional computing systems as it could enable parallel computation and adaptive learning process. However, the development of energy efficient neuromorphic hardware systems has been hindered by the limited performance of analog synaptic devices. Here, we demonstrate the analog conductance modulation behavior in the ferroelectric thin-film transistors (FeTFT) that have the nanoscale ferroelectric material and oxide semiconductors. Accurate control of polarization changes in the nanoscale ferroelectric layer induces conductance modulation to demonstrate linear potentiation and depression characteristics of FeTFTs. Our devices show potentiation and depression properties, including high linearity, multiple states, and small cycle-to-cycle/device-to-device variations. In simulations with measured properties, a neuromorphic system with FeTFT achieves 91.1% recognition accuracy of handwritten digits. This work may provide a way to realize the neuromorphic hardware systems that use FeTFTs as the synaptic devices.

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Metadata

Authors
Kim, M.-K., & Lee, J.-S.
Venue
Nano Letters
Published
2019-01-30
Volume
19
Issue
3
Pages
2044-2050
ISSN
  • 1530-6984 (ISSN-L)
  • 1530-6992
OpenAlex
W2912035255
Cited by
594
References
35
FWCI
24.50
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ferroelectric Analog Synaptic Transistors. https://app.cochat.ai/papers/10.1021/acs.nanolett.9b00180
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Kim, M.-K., & Lee, J.-S. (2019). Ferroelectric Analog Synaptic Transistors. Nano Letters. https://doi.org/10.1021/acs.nanolett.9b00180

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