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Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects

Landin, L., Miller, M. S., Pistol, M.-E., Pryor, C. E., Samuelson, L.·1998·Science

Abstract

Optical emission from individual strained indium arsenide (InAs) islands buried in gallium arsenide (GaAs) was studied. At low excitation power density, the spectra from these quantum dots consist of a single line. At higher excitation power density, additional emission lines appeared at both higher and lower energies, separated from the main line by about 1 millielectron volt. At even higher excitation power density, this set of lines was replaced by a broad emission peaking below the original line. The splittings were an order of magnitude smaller than the lowest single-electron or single-hole excited state energies, indicating that the fine structure results from few-particle interactions in the dot. Calculations of few-particle effects give splittings of the observed magnitude.

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Metadata

Authors
Landin, L., Miller, M. S., Pistol, M.-E., Pryor, C. E., & Samuelson, L.
Venue
Science
Published
1998-04-10
Volume
280
Issue
5361
Pages
262-264
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W1996506684
Cited by
305
References
0
FWCI
26.74
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects. https://app.cochat.ai/papers/10.1126/science.280.5361.262
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Landin, L., Miller, M. S., Pistol, M.-E., Pryor, C. E., & Samuelson, L. (1998). Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects. Science. https://doi.org/10.1126/science.280.5361.262

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