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Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide
Abstract
We show that the physical and electrical structure and hence the inversion charge for crystalline oxides on semiconductors can be understood and systematically manipulated at the atomic level. Heterojunction band offset and alignment are adjusted by atomic-level structural and chemical changes, resulting in the demonstration of an electrical interface between a polar oxide and a semiconductor free of interface charge. In a broader sense, we take the metal oxide semiconductor device to a new and prominent position in the solid-state electronics timeline. It can now be extensively developed using an entirely new physical system: the crystalline oxides–on–semiconductors interface.
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Citations
Cited by
Haes, A. J., & Van Duyne, R. P. (2002) · Journal of the American Chemical Society · doi:10.1021/ja020393x · Cited by 2,057
Evolution of epitaxial BaTiO3 on SrTiO3-buffered Si: Phase field analysis
Li, W., Landis, C. M., & Demkov, A. A. (2022) · Journal of Applied Physics · doi:10.1063/5.0111188 · Cited by 8
Metadata
- Authors
- McKee, R. A., Walker, F. J., & Chisholm, M. F.
- Venue
- Science
- Published
- 2001-07-20
- Volume
- 293
- Issue
- 5529
- Pages
- 468-471
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2054084603
- Cited by
- 325
- References
- 0
- FWCI
- 24.26
- Type
- journal article
- Language
- en
- Open access
- closed
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- McKee, R. A., Walker, F. J., & Chisholm, M. F. (2001). Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide. Science. https://doi.org/10.1126/science.293.5529.468
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
