Thermal conductivity of polar nitride perovskite LaWN3
Abstract
ABX 3-type nitride perovskites offer promising avenues for the future electronic industry, renowned for exceptional ferro- and piezo-electric properties with facile integration into prevalent nitride semiconductors. However, the paucity of in-depth investigations of thermal transport of nitride perovskites poses a substantial impediment to the practical implementation. Here, we experimentally investigate the thermal conductivity of orthorhombic polar LaWN 3, synthesized by high-pressure high-temperature technique. The observed thermal conductivity exhibits drastic reduction with decreasing temperature, reminiscent of the behavior in amorphous silica. We postulate the anomalous glass-like thermal conductivity to a synergistic interplay of potential Ferron–phonon interactions, lattice disorders from octahedral distortions, and wave-like atomic tunneling. This study represents a pioneering exploration of thermal transport within nitride perovskites, paving the way for future advancements in nitride-based electronics.
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The maximum Λ and G values obtained for the Al/Si sample agree with literature values within the error range, validating the accuracy of the measurements.
“The obtained maximum values of Λ and G in the Al/Si sample are in excellent agreement with literature values within the error range [20, 26], validating the accuracy of our measurements.”
From Boundary conditions dictate frequency dependence of thermal conductivity in silicon (2025) · cites this paper as [26]
The total thermal conductivity Λ1 + Λ2 = 141 W m−1 K−1 at room temperature aligns well with previously reported values.
“The total thermal conductivity Λ 1 + Λ 2 = 141 W m -1 K -1 aligns well with previously reported value [18, 26, 32].”
From Boundary conditions dictate frequency dependence of thermal conductivity in silicon (2025) · cites this paper as [26]
Cites
Sun, B., & Koh, Y. K. (2016) · Review of Scientific Instruments · doi:10.1063/1.4952579 · Cited by 57 · see citing works
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Boundary conditions dictate frequency dependence of thermal conductivity in silicon
Liu, Y., Li, Q., Liu, F., Wang, X., & Sun, B. (2025) · Applied Physics Reviews · doi:10.1063/5.0254248 · Cited by 4 · see citing works
Self-citation
- Authors
- Liu, Y., Zhou, X., Wang, S., & Sun, B.
- Affiliations
- Tsinghua–Berkeley Shenzhen Institute (CN)
- Southern University of Science and Technology (CN)
- Venue
- Modern Physics Letters B
- Publisher
- World Scientific Pub Co Pte Ltd
- Published
- 2024-11-25
- Volume
- 39
- Issue
- 20
- ISSN
- 0217-9849 (ISSN-L)
- 1793-6640
- OpenAlex
- W4404700879
- Cited by
- 3
- References
- 1
- Citations by year
- 2025: 3
- FWCI
- 0.29
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Modern Physics Letters B (publishedVersion)
- Funders
- Shenzhen Science and Technology Innovation Program (RCYX20200714114643187, WDZC20200821100123001)
- National Natural Science Foundation of China (52161145502, 12004211, 12174175)
- Basic and Applied Basic Research Foundation of Guangdong Province (2022B1515120014)
- Tsinghua Shenzhen International Graduate School (QD2021008N, JC2021008)
- Guangdong Special (2023TQ07A273)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Thermal properties of materials
- Physical Sciences › Materials Science › Materials Chemistry › Thermal Expansion and Ionic Conductivity
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- thermal conductivity, orthorhombic perovskite, glass-like thermal conductivity, octahedral distortion, atomic tunneling, high-pressure high-temperature synthesis, nitride semiconductors
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