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Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
Open accessAbstract
We report the first observation of the room temperature stimulated emission near UV from a GaN film which was grown by metalorganic vapor phase epitaxy on a (0001) sapphire substrate using an AlN buffer layer. This indicates that the GaN film is promising for the realization of an UV laser diode.
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Cited by
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Metadata
- Authors
- Amano, H., Asahi, T., & Akasaki, I.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1990-02-01
- Volume
- 29
- Issue
- 2A
- Pages
- L205
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2017643549
- Cited by
- 199
- References
- 0
- FWCI
- 5.25
- Type
- journal article
- Language
- en
- Open access
- bronze
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- CoChat. (2026). Citation check: Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer. https://app.cochat.ai/papers/10.1143/jjap.29.l205
- The paper
- Amano, H., Asahi, T., & Akasaki, I. (1990). Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.29.l205
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
