The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
Metal semiconductor field effect transistor based on single crystal GaN
Abstract
In this letter we report the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN. The GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition. MESFET devices were fabricated on isolated mesas using TiAu for the source and drain ohmic contacts and silver for the gate Schottky. For devices with a gate length of 4 μm (channel opening, i.e., source to drain separation of 10 μm), a transconductance of 23 mS/mm was obtained at −1 V gate bias. Complete pinch-off was observed for a gate potential of −12 V.
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Cites
Khan, M. A., Kuznia, J. N., Olson, D. T., Van Hove, J. M., Blasingame, M., & Reitz, L. F. (1992) · Applied Physics Letters · doi:10.1063/1.106819 · Cited by 392
Self-citationProperties of Al x Ga1−x N films prepared by reactive molecular beam epitaxy
Yoshida, S., Misawa, S., & Gonda, S. (1982) · Journal of Applied Physics · doi:10.1063/1.329998 · Cited by 275
Khan, M. A., Kuznia, J. N., Van Hove, J. M., Pan, N., & Carter, J. (1992) · Applied Physics Letters · doi:10.1063/1.106798 · Cited by 248
Self-citationElectrical properties of n-type vapor-grown gallium nitride
Ilegems, M., & Montgomery, H. C. (1973) · Journal of Physics and Chemistry of Solids · doi:10.1016/s0022-3697(73)80090-3 · Cited by 205
Amano, H., Asahi, T., & Akasaki, I. (1990) · Japanese Journal of Applied Physics · doi:10.1143/jjap.29.l205 · Cited by 199
Khan, M. A., Van Hove, J. M., Kuznia, J. N., & Olson, D. T. (1991) · Applied Physics Letters · doi:10.1063/1.104886 · Cited by 182
Self-citationAsif Khan, M., Kuznia, J. N., Van Hove, J. M., Olson, D. T., Krishnankutty, S., & Kolbas, R. M. (1991) · Applied Physics Letters · doi:10.1063/1.104575 · Cited by 174
Self-citationLow pressure metalorganic chemical vapor deposition of AIN over sapphire substrates
Khan, M. A., Kuznia, J. N., Skogman, R. A., Olson, D. T., Millan, M. M., & Choyke, W. J. (1992) · Applied Physics Letters · doi:10.1063/1.108144 · Cited by 113
Self-citationAtomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
Khan, M. A., Skogman, R. A., Hove, J. M. V., Olson, D. T., & Kuznia, J. N. (1992) · Applied Physics Letters · doi:10.1063/1.107484 · Cited by 107
Self-citation
Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
Self-citationEmerging gallium nitride based devices
Mohammad, S. N., Salvador, A. A., & Morkoc, H. (1995) · Proceedings of the IEEE · doi:10.1109/5.469300 · Cited by 614
Fabrication and performance of GaN electronic devices
Pearton, S. J., Ren, F., Zhang, A. P., & Lee, K. P. (2000) · Materials Science and Engineering: R: Reports · doi:10.1016/s0927-796x(00)00028-0 · Cited by 507
Progress and prospects of group-III nitride semiconductors
Mohammad, S. N., & Morkoç, H. (1996) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(96)00002-x · Cited by 502
Metadata
- Authors
- Asif Khan, M., Kuznia, J. N., Bhattarai, A. R., & Olson, D. T.
- Venue
- Applied Physics Letters
- Publisher
- AIP Publishing
- Published
- 1993-04-12
- Volume
- 62
- Issue
- 15
- Pages
- 1786-1787
- ISSN
- 0003-6951 (ISSN-L)
- 1077-3118
- OpenAlex
- W1996846925
- Cited by
- 370
- References
- 9
- FWCI
- 11.81
- Type
- journal article
- Language
- en
- Open access
- closed
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- Asif Khan, M., Kuznia, J. N., Bhattarai, A. R., & Olson, D. T. (1993). Metal semiconductor field effect transistor based on single crystal GaN. Applied Physics Letters. https://doi.org/10.1063/1.109549
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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