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High-Power GaN P-N Junction Blue-Light-Emitting Diodes

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Nakamura, Shuji, Takashi Mukai, Takashi Mukai, Masayuki Senoh, Masayuki Senoh·1991·Japanese Journal of Applied Physics

Abstract

High-power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output power was almost 10 times higher than that of conventional 8-mcd SiC blue LEDs. The forward voltage was as low as 4 V at a forward current of 20 mA. This forward voltage is the lowest ever reported for GaN LEDs. The peak wavelength and the full width at half-maximum (FWHM) of GaN LEDs were 430 nm and 55 nm, respectively.

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Crossref · 10.1143/jjap.30.l1998

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Metadata

Authors
Nakamura, S., Takashi Mukai, T. M., & Masayuki Senoh, M. S.
Venue
Japanese Journal of Applied Physics
Published
1991-12-01
Volume
30
Issue
12A
Pages
L1998
ISSN
  • 0021-4922 (ISSN-L)
  • 1347-4065
OpenAlex
W2037054209
Cited by
844
References
0
FWCI
10.29
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: High-Power GaN P-N Junction Blue-Light-Emitting Diodes. https://app.cochat.ai/papers/10.1143/jjap.30.l1998
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Nakamura, S., Takashi Mukai, T. M., & Masayuki Senoh, M. S. (1991). High-Power GaN P-N Junction Blue-Light-Emitting Diodes. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.30.l1998

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