The DOI matches its Crossref record.
Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation
Open accessAbstract
We propose a general method to obtain high conductivity of either type in wide gap semiconductors where compensation normally limits conductivity of one or both types. We suggest that the successes of Amano et al. and of Nakamura et al. in obtaining more than 10 18 cm-3 holes in GaN are particular examples of the general process that we propose.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., & Burns, M. (1994) · Journal of Applied Physics · doi:10.1063/1.358463 · Cited by 2,733
Growth of Group III Nitrides. A Review of Precursors and Techniques
Neumayer, D. A., & Ekerdt, J. G. (1996) · Chemistry of Materials · doi:10.1021/cm950108r · Cited by 313
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
Estreicher, S. K. (1995) · Materials Science and Engineering: R: Reports · doi:10.1016/0927-796x(95)00178-6 · Cited by 269
Kim, W., Botchkarev, A. E., Salvador, A., Popovici, G., Tang, H., & Morkoç, H. (1997) · Journal of Applied Physics · doi:10.1063/1.365801 · Cited by 168
Metadata
- Authors
- Vechten, J. A. V., Zook, J. D., Horning, R. D., & Goldenberg, B.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1992-11-01
- Volume
- 31
- Issue
- 11R
- Pages
- 3662
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W1999253380
- Cited by
- 167
- References
- 0
- FWCI
- 6.34
- Type
- journal article
- Language
- en
- Open access
- bronze
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation. https://app.cochat.ai/papers/10.1143/jjap.31.3662
- The paper
- Vechten, J. A. V., Zook, J. D., Horning, R. D., & Goldenberg, B. (1992). Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.31.3662
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
