The DOI matches its Crossref record; 39 of the 39 references it cites were found in a registry or an index.
Growth of Group III Nitrides. A Review of Precursors and Techniques
Abstract
The AlGaInN quaternary alloy system is uniquely suited for numerous device applications because the bandgap can be varied from 1.9 to 6.2 eV by changing the alloy composition. Growth of epitaxial device-quality group III (Al, Ga, In) nitride films has been hindered by a lack of suitably lattice matched substrates, the large equilibrium dissociation pressure of N 2 from the nitrides at typical growth temperatures, and predeposition reactions in the commonly employed metal−organic chemical vapor (MOCVD) precursors. The most successful films have been grown at temperatures in excess of 900 °C by MOCVD. However, high growth temperatures may limit compatibility and incorporation of group III nitrides with existing fabrication technologies and devices. Attempts to lower deposition temperature include activated nitrogen sources and alternative precursors. This review will discuss improvement in film properties as a function of growth chemistry and will focus on MOCVD precursors used specifically for the growth of group III nitrides.
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Cites
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Nakamura, S., Mukai, T., & Senoh, M. (1994) · Applied Physics Letters · doi:10.1063/1.111832 · Cited by 3,823
Strite, S., & Morkoç, H. (1992) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585897 · Cited by 2,883
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
Amano, H., Sawaki, N., Akasaki, I., & Toyoda, Y. (1986) · Applied Physics Letters · doi:10.1063/1.96549 · Cited by 2,217
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Amano, H., Kito, M., Hiramatsu, K., & Akasaki, I. (1989) · Japanese Journal of Applied Physics · doi:10.1143/jjap.28.l2112 · Cited by 2,002
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
Nakamura, S., Senoh, M., Iwasa, N., et al. (1995) · Japanese Journal of Applied Physics · doi:10.1143/jjap.34.l797 · Cited by 1,508
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Maruska, H. P., & Tietjen, J. J. (1969) · Applied Physics Letters · doi:10.1063/1.1652845 · Cited by 1,350
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Nakamura, S., Mukai, T., Masayuki Senoh, M. S., & Naruhito Iwasa, N. I. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.l139 · Cited by 1,141
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Nakamura, S., Iwasa, N., Masayuki Senoh, M. S., & Takashi Mukai, T. M. (1992) · Japanese Journal of Applied Physics · doi:10.1143/jjap.31.1258 · Cited by 1,079
High dislocation densities in high efficiency GaN-based light-emitting diodes
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High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
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Cited by
Synthesis and Applications of Molecular Sieve Layers and Membranes
Bein, T. (1996) · Chemistry of Materials · doi:10.1021/cm960148a · Cited by 425
Zhang, Z., Qian, Q., Li, B., & Chen, K. J. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b01286 · Cited by 286
Metadata
- Authors
- Neumayer, D. A., & Ekerdt, J. G.
- Venue
- Chemistry of Materials
- Publisher
- American Chemical Society (ACS)
- Published
- 1996-01-01
- Volume
- 8
- Issue
- 1
- Pages
- 9-25
- ISSN
- 0897-4756 (ISSN-L)
- 1520-5002
- OpenAlex
- W2950229617
- Cited by
- 313
- References
- 39
- FWCI
- 15.70
- Type
- journal article
- Language
- en
- Open access
- closed
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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