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Temperature Dependence of Band Gap Change in InN and AlN
Abstract
The optical band gap of InN and AlN single crystal films was measured through absorption spectra in the temperature range of 4.2 to 300 K. The samples were grown on (0001)α-Al 2 O 3 substrates by metalorganic vapor phase epitaxy. The Varshni equation and the Bose-Einstein expression have been compared with the experimental results. The nitride III-V compound semiconductors have smaller temperature dependence of band gap change. In III-V compound semiconductors, the variation of the band gap change increases in the order of N, P and As.
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Citations
Cited by
Heyd, J., Peralta, J. E., Scuseria, G. E., & Martin, R. L. (2005) · The Journal of Chemical Physics · doi:10.1063/1.2085170 · Cited by 2,046
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., et al. (2018) · Advanced Electronic Materials · doi:10.1002/aelm.201600501 · Cited by 1,602
Indium nitride (InN): A review on growth, characterization, and properties
Bhuiyan, A. G., Hashimoto, A., & Yamamoto, A. (2003) · Journal of Applied Physics · doi:10.1063/1.1595135 · Cited by 848
GaN-based power devices: Physics, reliability, and perspectives
Meneghini, M., De Santi, C., Abid, I., Buffolo, M., Cioni, M., Khadar, R. A., Nela, L., Zagni, N., Chini, A., Medjdoub, F., et al. (2021) · Journal of Applied Physics · doi:10.1063/5.0061354 · Cited by 723
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Rinke, P., Winkelnkemper, M., Qteish, A., Bimberg, D., Neugebauer, J., & Scheffler, M. (2008) · Physical Review B · doi:10.1103/physrevb.77.075202 · Cited by 411
Metadata
- Authors
- Qixin Guo, Q. G., & Akira Yoshida, A. Y.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 1994-05-01
- Volume
- 33
- Issue
- 5R
- Pages
- 2453
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2039655418
- Cited by
- 190
- References
- 0
- FWCI
- 1.44
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Temperature Dependence of Band Gap Change in InN and AlN. https://app.cochat.ai/papers/10.1143/jjap.33.2453
- The paper
- Qixin Guo, Q. G., & Akira Yoshida, A. Y. (1994). Temperature Dependence of Band Gap Change in InN and AlN. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.33.2453
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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