The DOI matches its Crossref record; 22 of the 22 references it cites were found in a registry or an index.
Indium nitride (InN): A review on growth, characterization, and properties
Open accessAbstract
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of InN films. High quality single crystalline InN film with two-dimensional growth and high growth rate are now routinely obtained. The background carrier concentration and Hall mobility have also improved. Observation of strong photoluminescence near the band edge is reported very recently, leading to conflicts concerning the exact band gap of InN. Attempts have also been made on the deposition of InN based heterostructures for the fabrication of InN based electronic devices. Preliminary evidence of two-dimensional electron gas accumulation in the InN and studies on InN-based field-effect transistor structure are reported. In this article, the work accomplished in the InN research, from its evolution to till now, is reviewed. The In containing alloys or other nitrides (AlGaInN, GaN, AlN) are not discussed here. We mainly concentrate on the growth, characterization, and recent developments in InN research. The most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy, are discussed in detail with their recent progress. Important phenomena in the epitaxial growth of InN as well as the problems remaining for future study are also discussed.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Strite, S., & Morkoç, H. (1992) · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · doi:10.1116/1.585897 · Cited by 2,883
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Nakamura, S., Senoh, M., Nagahama, S.-I., Iwasa, N., Yamada, T., Matsushita, T., Hiroyuki Kiyoku, H. K., & Yasunobu Sugimoto, Y. S. (1996) · Japanese Journal of Applied Physics · doi:10.1143/jjap.35.l74 · Cited by 2,502
GaN: Processing, defects, and devices
Pearton, S. J., Zolper, J. C., Shul, R. J., & Ren, F. (1999) · Journal of Applied Physics · doi:10.1063/1.371145 · Cited by 1,814
Growth and applications of Group III-nitrides
Ambacher, O. (1998) · Journal of Physics D: Applied Physics · doi:10.1088/0022-3727/31/20/001 · Cited by 1,474
Unusual properties of the fundamental band gap of InN
Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., & Nanishi, Y. (2002) · Applied Physics Letters · doi:10.1063/1.1482786 · Cited by 1,472
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
Kim, K., Lambrecht, W. R. L., & Segall, B. (1996) · Physical Review B · doi:10.1103/physrevb.53.16310 · Cited by 730
Optical band gap of indium nitride
Tansley, T. L., & Foley, C. P. (1986) · Journal of Applied Physics · doi:10.1063/1.336906 · Cited by 616
Electron mobilities in gallium, indium, and aluminum nitrides
Chin, V. W. L., Tansley, T. L., & Osotchan, T. (1994) · Journal of Applied Physics · doi:10.1063/1.356650 · Cited by 509
Progress and prospects of group-III nitride semiconductors
Mohammad, S. N., & Morkoç, H. (1996) · Progress in Quantum Electronics · doi:10.1016/s0079-6727(96)00002-x · Cited by 502
Powell, R. C., Lee, N.-E., Kim, Y.-W., & Greene, J. E. (1993) · Journal of Applied Physics · doi:10.1063/1.353882 · Cited by 422
Cited by
First-principles calculations for defects and impurities: Applications to III-nitrides
Van de Walle, C. G., & Neugebauer, J. (2004) · Journal of Applied Physics · doi:10.1063/1.1682673 · Cited by 3,257
Terahertz emission from vertically aligned InN nanorod arrays
Ahn, H., Ku, Y.-P., Wang, Y.-C., Chuang, C.-H., Gwo, S., & Pan, C.-L. (2007) · Applied Physics Letters · doi:10.1063/1.2789183 · Cited by 57
Metadata
- Authors
- Bhuiyan, A. G., Hashimoto, A., & Yamamoto, A.
- Venue
- Journal of Applied Physics
- Publisher
- AIP Publishing
- Published
- 2003-09-01
- Volume
- 94
- Issue
- 5
- Pages
- 2779-2808
- ISSN
- 0021-8979 (ISSN-L)
- 1089-7550
- OpenAlex
- W1988213965
- Cited by
- 848
- References
- 22
- FWCI
- 47.80
- Type
- journal article
- Language
- en
- Open access
- green
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Indium nitride (InN): A review on growth, characterization, and properties. https://app.cochat.ai/papers/10.1063/1.1595135
- The paper
- Bhuiyan, A. G., Hashimoto, A., & Yamamoto, A. (2003). Indium nitride (InN): A review on growth, characterization, and properties. Journal of Applied Physics. https://doi.org/10.1063/1.1595135
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
