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Electronic Properties of Amorphous and Crystalline Ge2Sb2Te5 Films
Open accessAbstract
Optical and electrical properties of sputtered Ge 2 Sb 2 Te 5 films in amorphous and crystalline states have been studied. The optical band-gaps of amorphous, cubic (NaCl-type), and hexagonal Ge 2 Sb 2 Te 5 are 0.74, 0.5, and 0.5 eV, respectively. Electrically, the amorphous and cubic states behave as semiconductors with activation energies of 0.45 and 0.14 eV, while the hexagonal state is metallic. The resistivity decreases slightly at the melting point of ∼600°C. All the states show p-type thermoelectric power, in which the amorphous and the cubic state have the activation energies of 0.3 and 0.14 eV. Carrier parameters and electronic densities-of-states are estimated and considered.
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Cited by
Nanoscale thermal transport. II. 2003–2012
Cahill, D. G., Braun, P. V., Chen, G., Clarke, D. R., Fan, S., Goodson, K. E., Keblinski, P., King, W. P., Mahan, G. D., Majumdar, A., et al. (2014) · Applied Physics Reviews · doi:10.1063/1.4832615 · Cited by 1,763
Phase Change Materials and Their Application to Nonvolatile Memories
Raoux, S., Wełnic, W., & Ielmini, D. (2010) · Chemical Reviews · doi:10.1021/cr900040x · Cited by 873
Metadata
- Authors
- Kato, T., & Tanaka, K.
- Venue
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Published
- 2005-10-01
- Volume
- 44
- Issue
- 10R
- Pages
- 7340
- ISSN
- 0021-4922 (ISSN-L)
- 1347-4065
- OpenAlex
- W2085820028
- Cited by
- 252
- References
- 0
- FWCI
- 3.83
- Type
- journal article
- Language
- en
- Open access
- bronze
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