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Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
Abstract
The impurity conduction in phosphorus doped n -type silicon has been investigated at temperatures between 1.1°K and 300°K. The samples ranged in concentration of excess donors from 1.2.10 18 to 2.5.10 20 cm -3 . A metallic type impurity conduction and a negative magnetoresistance are observed in samples containing higher than 4.10 18 cm -3 excess donors. An intermediate type impurity conduction is observed in samples containing from 1.7.10 18 to 4.10 18 cm -3 excess donors. In metallic samples with donor concentration higher than 6.10 18 cm -3 , the resistivity increases monotonically with temperature T up to the Fermi degeneracy temperature T D of respective samples according to a simple formula, ρ( T )=ρ(4.2^°K)[1+ A ( T / T D ) B ], where A and B are constants.
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Citations
Cited by
Thermal conduction in doped single-crystal silicon films
Asheghi, M., Kurabayashi, K., Kasnavi, R., & Goodson, K. E. (2002) · Journal of Applied Physics · doi:10.1063/1.1458057 · Cited by 469
Theory of negative magnetoresistance in three-dimensional systems
Kawabata, A. (1980) · Solid State Communications · doi:10.1016/0038-1098(80)90644-4 · Cited by 364
Transport properties of silicon
Weber, L., & Gmelin, E. (1991) · Applied Physics A Solids and Surfaces · doi:10.1007/bf00323873 · Cited by 295
Metadata
- Authors
- Yamanouchi, C., Mizuguchi, K., & Sasaki, W.
- Venue
- Journal of the Physical Society of Japan
- Publisher
- Physical Society of Japan
- Published
- 1967-03
- Volume
- 22
- Issue
- 3
- Pages
- 859-864
- ISSN
- 0031-9015 (ISSN-L)
- 1347-4073
- OpenAlex
- W2025567706
- Cited by
- 280
- References
- 0
- FWCI
- 7.29
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Electric Conduction in Phosphorus Doped Silicon at Low Temperatures. https://app.cochat.ai/papers/10.1143/jpsj.22.859
- The paper
- Yamanouchi, C., Mizuguchi, K., & Sasaki, W. (1967). Electric Conduction in Phosphorus Doped Silicon at Low Temperatures. Journal of the Physical Society of Japan. https://doi.org/10.1143/jpsj.22.859
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