The DOI matches its Crossref record; 14 of the 14 references it cites were found in a registry or an index.
Transport properties of silicon
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
The Physics of Semiconductor Devices: Proceedings of IWPSD 2021
(2024) · Springer Proceedings in Physics · doi:10.1007/978-981-97-1571-8 · Cited by 4,032
Physics of Semiconductor Devices
Pridham, G. J. (1970) · Electronics and Power · doi:10.1049/ep.1970.0039 · Cited by 3,952
Ziman, J. M., & Levy, P. W. (1961) · Physics Today · doi:10.1063/1.3057244 · Cited by 3,368
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
Glassbrenner, C. J., & Slack, G. A. (1964) · Physical Review · doi:10.1103/physrev.134.a1058 · Cited by 1,652
Electrical Properties of Silicon Containing Arsenic and Boron
Morin, F. J., & Maita, J. P. (1954) · Physical Review · doi:10.1103/physrev.96.28 · Cited by 1,007
Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
Slack, G. A. (1964) · Journal of Applied Physics · doi:10.1063/1.1713251 · Cited by 695
Theory of the Thermoelectric Power of Semiconductors
Herring, C. (1954) · Physical Review · doi:10.1103/physrev.96.1163 · Cited by 555
Elastic Moduli of Silicon vs Hydrostatic Pressure at 25.0°C and − 195.8°C
McSkimin, H. J., & Andreatch, P. (1964) · Journal of Applied Physics · doi:10.1063/1.1702809 · Cited by 387
Flubacher, P., Leadbetter, A. J., & Morrison, J. A. (1959) · Philosophical Magazine · doi:10.1080/14786435908233340 · Cited by 359
Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
Yamanouchi, C., Mizuguchi, K., & Sasaki, W. (1967) · Journal of the Physical Society of Japan · doi:10.1143/jpsj.22.859 · Cited by 280
Cited by
Enhanced thermoelectric performance of rough silicon nanowires
Hochbaum, A. I., Chen, R., Delgado, R. D., Liang, W., Garnett, E. C., Najarian, M., Majumdar, A., & Yang, P. (2008) · Nature · doi:10.1038/nature06381 · Cited by 4,109
Silicon nanowires as efficient thermoelectric materials
Boukai, A. I., Bunimovich, Y., Tahir-Kheli, J., Yu, J.-K., Goddard III, W. A., & Heath, J. R. (2008) · Nature · doi:10.1038/nature06458 · Cited by 2,729
Nanoporous Si as an Efficient Thermoelectric Material
Lee, J.-H., Galli, G. A., & Grossman, J. C. (2008) · Nano Letters · doi:10.1021/nl802045f · Cited by 296
Bao, X.-Q., Petrovykh, D. Y., Alpuim, P., Stroppa, D. G., Guldris, N., Fonseca, H., Costa, M., Gaspar, J., Jin, C., & Liu, L. (2015) · Nano Energy · doi:10.1016/j.nanoen.2015.06.014 · Cited by 96
Low-temperature magnetotransport of the narrow-gap semiconductor FeSb2
Takahashi, H., Okazaki, R., Yasui, Y., & Terasaki, I. (2011) · Physical Review B · doi:10.1103/physrevb.84.205215 · Cited by 64
Metadata
- Authors
- Weber, L., & Gmelin, E.
- Venue
- Applied Physics A Solids and Surfaces
- Published
- 1991-08
- Volume
- 53
- Issue
- 2
- Pages
- 136-140
- ISSN
- 0947-8396 (ISSN-L)
- 0721-7250
- 1432-0630
- OpenAlex
- W2057243007
- Cited by
- 295
- References
- 14
- FWCI
- 0.75
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Transport properties of silicon. https://app.cochat.ai/papers/10.1007/bf00323873
- The paper
- Weber, L., & Gmelin, E. (1991). Transport properties of silicon. Applied Physics A Solids and Surfaces. https://doi.org/10.1007/bf00323873
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.