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Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors

Kawabata, Arisato·1980·Journal of the Physical Society of Japan

Abstract

Theory of negative magnetoresistance proposed recently by the author is presented in details and is applied to heavily doped semiconductors. Experiments on n-type GaAs are semi-quantitatively explained. The theory is extended to the case of anisotropic systems and is applied to Ge and Si. Quantitative agreements with experiment are obtained on the anisotropy of magnetoresistance Δ ρ in Ge. Square root dependence of Δ ρ out the magnitude of the magnetic field observed in Ge agrees with the prediction of the theory. As for the magnitude of Δ ρ in Ge and Si, discrepancies between the theory and experiments are rather large.

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Metadata

Authors
Kawabata, A.
Venue
Journal of the Physical Society of Japan
Published
1980-08
Volume
49
Issue
2
Pages
628-637
ISSN
  • 0031-9015 (ISSN-L)
  • 1347-4073
OpenAlex
W1970578230
Cited by
330
References
0
FWCI
9.37
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors. https://app.cochat.ai/papers/10.1143/jpsj.49.628
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Kawabata, A. (1980). Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors. Journal of the Physical Society of Japan. https://doi.org/10.1143/jpsj.49.628

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.