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Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors
Abstract
Theory of negative magnetoresistance proposed recently by the author is presented in details and is applied to heavily doped semiconductors. Experiments on n-type GaAs are semi-quantitatively explained. The theory is extended to the case of anisotropic systems and is applied to Ge and Si. Quantitative agreements with experiment are obtained on the anisotropy of magnetoresistance Δ ρ in Ge. Square root dependence of Δ ρ out the magnitude of the magnetic field observed in Ge agrees with the prediction of the theory. As for the magnitude of Δ ρ in Ge and Si, discrepancies between the theory and experiments are rather large.
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Citations
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Kim, H.-J., Kim, K.-S., Wang, J.-F., Sasaki, M., Satoh, N., Ohnishi, A., Kitaura, M., Yang, M., & Li, L. (2013) · Physical Review Letters · doi:10.1103/physrevlett.111.246603 · Cited by 425
Weak antilocalization and spin precession in quantum wells
Knap, W., Skierbiszewski, C., Zduniak, A., Litwin-Staszewska, E., Bertho, D., Kobbi, F., Robert, J. L., Pikus, G. E., Pikus, F. G., Iordanskii, S. V., et al. (1996) · Physical Review B · doi:10.1103/physrevb.53.3912 · Cited by 425
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Lu, H.-Z., & Shen, S.-Q. (2015) · Physical Review B · doi:10.1103/physrevb.92.035203 · Cited by 135
Metadata
- Authors
- Kawabata, A.
- Venue
- Journal of the Physical Society of Japan
- Publisher
- Physical Society of Japan
- Published
- 1980-08
- Volume
- 49
- Issue
- 2
- Pages
- 628-637
- ISSN
- 0031-9015 (ISSN-L)
- 1347-4073
- OpenAlex
- W1970578230
- Cited by
- 330
- References
- 0
- FWCI
- 9.37
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kawabata, A. (1980). Theory of Negative Magnetoresistance I. Application to Heavily Doped Semiconductors. Journal of the Physical Society of Japan. https://doi.org/10.1143/jpsj.49.628
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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