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Cited by 368

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility

Ando, Tsuneya·1982·Journal of the Physical Society of Japan

Abstract

The low temperature mobility is calculated in a two-dimensional system at a GaAs/Al x Ga 1- x As heterojunction. Scattering mechanisms are assumed to be the Coulomb scattering from ionized donors in the Al x Ga 1- x As layer, interface roughness, and scattering caused by alloy disorder present in the Al x Ga 1- x As layer. The calculated mobility for the Coulomb scattering explains recent experimental results. The interface roughness and the alloy scattering can play a role at high electron concentrations (∼10 12 cm -2 ).

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Metadata

Authors
Ando, T.
Venue
Journal of the Physical Society of Japan
Published
1982-12
Volume
51
Issue
12
Pages
3900-3907
ISSN
  • 0031-9015 (ISSN-L)
  • 1347-4073
OpenAlex
W2031741035
Cited by
368
References
1
FWCI
11.11
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility. https://app.cochat.ai/papers/10.1143/jpsj.51.3900
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Ando, T. (1982). Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility. Journal of the Physical Society of Japan. https://doi.org/10.1143/jpsj.51.3900

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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