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Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System

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Hikami, S., Larkin, A. I., Nagaoka, Y.·1980·Progress of Theoretical Physics

Abstract

Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed.

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Metadata

Authors
Hikami, S., Larkin, A. I., & Nagaoka, Y.
Venue
Progress of Theoretical Physics
Published
1980-02-01
Volume
63
Issue
2
Pages
707-710
ISSN
  • 0033-068X (ISSN-L)
  • 1347-4081
OpenAlex
W2132352444
Cited by
2,789
References
0
FWCI
39.47
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System. https://app.cochat.ai/papers/10.1143/ptp.63.707
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Hikami, S., Larkin, A. I., & Nagaoka, Y. (1980). Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System. Progress of Theoretical Physics. https://doi.org/10.1143/ptp.63.707

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.