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Scalable high performance main memory system using phase-change memory technology

Qureshi, Moinuddin K., Srinivasan, Vijayalakshmi, Rivers, Jude A.·2009·Proceedings of the 36th annual international symposium on Computer architecture

Abstract

The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. An alternative memory technology that uses resistance contrast in phase-change materials is being actively investigated in the circuits community. Phase Change Memory (PCM) devices offer more density relative to DRAM, and can help increase main memory capacity of future systems while remaining within the cost and power constraints.

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Metadata

Authors
Qureshi, M. K., Srinivasan, V., & Rivers, J. A.
Venue
Proceedings of the 36th annual international symposium on Computer architecture
Publisher
ACM
Published
2009-06-20
Pages
24-33
ISSN
1063-6897 (ISSN-L)
OpenAlex
W2048588974
Cited by
1,277
References
0
FWCI
119.05
Type
conference paper
Language
en
Open access
closed

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CoChat. (2026). Citation check: Scalable high performance main memory system using phase-change memory technology. https://app.cochat.ai/papers/10.1145/1555754.1555760
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Qureshi, M. K., Srinivasan, V., & Rivers, J. A. (2009). Scalable high performance main memory system using phase-change memory technology. Proceedings of the 36th annual international symposium on Computer architecture. https://doi.org/10.1145/1555754.1555760

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.