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Cited by 395

The DOI matches its Crossref record; 18 of the 18 references it cites were found in a registry or an index.

Phase-Change Technology and the Future of Main Memory

Lee, Benjamin C., Zhou, Ping, Yang, Jun, Zhang, Youtao, Zhao, Bo, Ipek, Engin, Mutlu, Onur, Burger, Doug·2010·IEEE Micro

Abstract

Phase-change may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable dream alternative for scalable main memories.

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Registry

Crossref · 10.1109/mm.2010.24

Cites

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Metadata

Authors
Lee, B. C., Zhou, P., Yang, J., Zhang, Y., Zhao, B., Ipek, E., Mutlu, O., & Burger, D.
Venue
IEEE Micro
Published
2010-01
Volume
30
Issue
1
Pages
143-143
ISSN
0272-1732 (ISSN-L)
OpenAlex
W2028802049
Cited by
395
References
18
FWCI
28.97
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Phase-Change Technology and the Future of Main Memory. https://app.cochat.ai/papers/10.1109/mm.2010.24
The paper
Lee, B. C., Zhou, P., Yang, J., Zhang, Y., Zhao, B., Ipek, E., Mutlu, O., & Burger, D. (2010). Phase-Change Technology and the Future of Main Memory. IEEE Micro. https://doi.org/10.1109/mm.2010.24

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.