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Cited by 1,698

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The Evolution of Silicon Wafer Cleaning Technology

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Kern, Werner·1990·Journal of The Electrochemical Society

Abstract

The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implementation with optimized equipment: from simple immersion to centrifugal spraying, megasonic techniques, and enclosed system processing that allow simultaneous removal of both contaminant films and particles. Improvements in wafer drying by use of isopropanol vapor or by "slow‐pull" out of hot deionized water are being investigated. Several alternative cleaning methods are also being tested, including choline solutions, chemical vapor etching, and UV/ozone treatments. The evolution of silicon wafer cleaning processes and technology is traced and reviewed from the 1950s to August 1989.

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Metadata

Authors
Kern, W.
Venue
Journal of The Electrochemical Society
Published
1990-06-01
Volume
137
Issue
6
Pages
1887-1892
ISSN
  • 0013-4651 (ISSN-L)
  • 1945-7111
OpenAlex
W2035974690
Cited by
1,698
References
0
FWCI
19.04
Type
journal article
Language
en
Open access
bronze

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CoChat. (2026). Citation check: The Evolution of Silicon Wafer Cleaning Technology. https://app.cochat.ai/papers/10.1149/1.2086825
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Kern, W. (1990). The Evolution of Silicon Wafer Cleaning Technology. Journal of The Electrochemical Society. https://doi.org/10.1149/1.2086825

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.